Freescale Dual N-Channel 30-V (D-S) MOSFET
These miniature surface mount MOSFETs utilize a high cell density trench proc...
Freescale Dual N-Channel 30-V (D-S)
MOSFET
These miniature surface mount
MOSFETs utilize a high cell density trench process to provide low rDS(on) and to ensure minimal power loss and heat dissipation. Typical applications are DC-DC converters and power management in portable and battery-powered products such as computers, printers, PCMCIA cards, cellular and cordless telephones. Low rDS(on) provides higher efficiency and extends battery life Low thermal impedance copper leadframe SOIC-8 saves board space Fast switching speed High performance trench technology
AO48 22/ MC48 22
PRODUCT SUMMARY VDS (V) rDS(on) m(Ω) 13.5 @ VGS = 10V 30 20 @ VGS = 4.5V
ID (A) 10 8
1 2 3 4
8 7 6 5
ABSOLUTE MAXIMUM RATINGS (TA = 25 oC UNLESS OTHERWISE NOTED) Parameter Symbol Limit Drain-Source
Voltage VDS 30 Gate-Source
Voltage ±20 VGS Continuous Drain Current Pulsed Drain Current
b a a
Units V
TA=25oC TA=70 C
o
ID IDM IS
10 8.2 ±50 2.3 2.1 1.3 -55 to 150 A W
o
A
Continuous Source Current (Diode Conduction) Power Dissipationa
TA=25 C TA=70 C
o
o
PD TJ, Tstg
Operating Junction and Storage Temperature Range
C
THERMAL RESISTANCE RATINGS Parameter
Maximum Junction-to-Case Maximum Junction-to-Ambienta
a
Symbol
t <= 5 sec t <= 5 sec RθJC RθJA
Maximum 40
60
Units
o o
C/W C/W
Notes a. Surface Mounted on 1” x 1” FR4 Board. b. Pulse width limited by maximum junction temperature
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Free Datasheet http://www.datasheet4u.com/
Freescale
AO48 22/ MC48 22
SPE...