MC4822

Freescale Dual N-Channel 30-V (D-S) MOSFET These miniature surface mount MOSFETs utilize a high cell density trench process to provide low rDS(on) and to ensure minimal power loss and heat dissipation. Typical applications are DC-DC converters and power management in portable and battery-powered products such as computers, printers, PCMCIA cards, cellular and cordless telephones. Low rDS(on) provides higher efficiency and extends battery life Low thermal impedance copper leadframe SOIC-8 saves board space Fast switching speed High performance trench technology AO48 22/ MC48 22 PRODUCT SUMMARY VDS (V) rDS(on) m(Ω) 13.5 @ VGS = 10V 30 20 @ VGS = 4.5V ID (A) 10 8 1 2 3 4 8 7 6 5 ABSOLUTE MAXIMUM RATINGS (TA = 25 oC UNLESS OTHERWISE NOTED) Parameter Symbol Limit Drain-Source Voltage VDS 30 Gate-Source Voltage ±20 VGS Continuous Drain Current Pulsed Drain Current b a a Units V TA=25oC TA=70 C o ID IDM IS 10 8.2 ±50 2.3 2.1 1.3 -55 to 150 A W o A Continuous Source Current (Diode Conduction) Power Dissipationa TA=25 C TA=70 C o o PD TJ, Tstg Operating Junction and Storage Temperature Range C THERMAL RESISTANCE RATINGS Parameter Maximum Junction-to-Case Maximum Junction-to-Ambienta a Symbol t <= 5 sec t <= 5 sec RθJC RθJA Maximum 40 60 Units o o C/W C/W Notes a. Surface Mounted on 1” x 1” FR4 Board. b. Pulse width limited by maximum junction temperature www.freescale.net.cn 1 Free Datasheet http://www.datasheet4u.com/ Freescale AO48 22/ MC48 22 SPE...