MITSUBISHI SWITCHING DIODE
Me911
HIGH-SPEED SWITCHING/SILICON EPITAXIAL TYPE (COMMON ANODE)
DESCRIPTION
The MC911 is a ...
MITSUBISHI SWITCHING DIODE
Me911
HIGH-SPEED SWITCHING/SILICON EPITAXIAL TYPE (COMMON ANODE)
DESCRIPTION
The MC911 is a silicon epitaxial double diode employing small epoxy molded package. It is designed .lor high-speed switching applications. Owing to the small terminal capacitance and the short switching time (reverse recovery time), this diode usable not only .lor high-speed switching applications but also .lor protection, bias and' other circuits. Moreover, this is small in size and double, it is suitable .lor high-density mounting applications.
FEATURES
Small terminal capacitance High speed switching High
voltage Double device and compact .lormat reduce dimensions
and enhance high-density mounting.
OUTLINE DRAWING
UNIT: rnm
;z; 01>0.45 <=> m
~.~ IJ [~ 1.25 r-- _ 1.25
~D~· ~I 3.55
~ -$-_$-$_"I 0
~ CD®Gl
ABSOLUTE MAXIMUM RATINGS (Ta=25"C)
Symbol V RM VR IFSM IFM 10
PT Tj TsIg
Parameter Peak reverse
voltage Reverse
voltage Forward surge current Peak forward cu...