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MCAC10H03

MCC

N-Channel MOSFET

MCAC10H03 Features • High Density Cell Desihn for Low RDS(on) • Fully Characterized Avalanche Voltage and Current • Exc...


MCC

MCAC10H03

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Description
MCAC10H03 Features High Density Cell Desihn for Low RDS(on) Fully Characterized Avalanche Voltage and Current Excellent Package for Good Heat Dissipation Special Process Technology for High ESD Capability Epoxy Meets UL 94 V-0 Flammability Rating Moisture Sensitivity Level 1 Halogen Free Available Upon Request By Adding Suffix "-HF" Lead Free Finish/RoHS Compliant ("P" Suffix Designates RoHS Compliant. See Ordering Information) Maximum Ratings Operating Junction Temperature Range : -55°C to +150°C Storage Temperature Range: -55°C to +150°C Thermal Resistance: 62.5°C/W Junction to Ambient(Note 1) Parameter Drain-Source Voltage Gate-Source Volltage Continuous Drain Current Pulsed Drain Current Total Power Dissipation (Note 1) Symbol VDS VGS ID IDM PD Rating 30 ±20 100 400 2 Unit V V A A W Note: 1.Mounted on a Glass Epoxy Board of 25.4mm x 25.4mm x 0.8mm. Internal Structure D D D D 8 7 6 5 1 2 3 4 S S S G N-CHANNEL MOSFET DFN5060-8 .* ( ' PIN 1 - ) 0 5 4 + , 1 3 2 DIMENSIONS DIM INCHES MIN MAX MM MIN MAX A 0.035 0.039 0.900 1.000 B 0.010 0.254 C 0.195 0.201 4.944 5.096 D 0.235 0.241 5.974 6.126 E 0.154 0.162 3.910 4.110 F 0.133 0.141 3.375 3.575 G 0.190 0.196 4.824 4.976 H 0.223 0.229 5.674 5.826 K 0.047 0.055 1.190 1.390 J 0.014 0.018 0.350 0.450 L 0.050 1.270 M 0.022 0.028 0.559 0.711 N 0.017 0.023 0.424 0.576 O 0.023 0.029 0.574 0.726 θ 10° 12° 10° 12° NOTE TYP. TYP. Rev.3-1-01012019 1/4 MC...




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