MCH3301

Ordering number : ENN6431A MCH3301 P-Channel Silicon MOSFET MCH3301 Ultrahigh-Speed Switching Applications Preliminary Features Package Dimensions unit : mm 2167A [MCH3301] 0.25 0.3 3 0.15 Low ON resistance. Ultrahigh-speed switching. 2.5V drive. 2.1 1.6 0.25 0.65 2.0 (Bottom view) 0.07 2 1 3 1 : Gate 2 : Source 3 : Drain 1 2 (Top view) 0.85 Specifications Absolute Maximum Ratings at Ta=25°C Parameter Drain-to-Source Voltage Gate-to-Source Voltage Drain Current (DC) Drain Current (Pulse) Allowable Power Dissipation Channel Temperature Storage Temperature Symbol VDSS VGSS ID IDP PD Tch Tstg PW≤10µs, duty cycle≤1% Mounted on a ceramic board (900mm2!0.8mm) Conditions SANYO : MCPH3 Ratings --20 ±10 --1 --4 1 150 --55 to +150 Unit V V A A W °C °C Electrical Characteristics at Ta=25°C Parameter Drain-to-Source Breakdown Voltage Zero-Gate Voltage Drain Current Gate-to-Source Leakage Current Cutoff Voltage Forward Transfer Admittance Static Drain-to-Source On-State Resistance Symbol V(BR)DSS IDSS IGSS VGS(off) yfs RDS(on)1 RDS(on)2 Conditions ID=-1mA, VGS=0 VDS=--20V, VGS=0 VGS=±8V, VDS=0 VDS=--10V, ID=--1mA VDS=--10V, ID=--500mA ID=-500mA, VGS=-4V ID=-300mA, VGS=-2.5V Ratings min --20 --10 ±10 --0.4 0.9 1.3 400 600 520 840 --1.4 typ max Unit V µA µA V S mΩ mΩ Marking : JA Continued on next page. Any and all SANYO products described or contained herein do not have specifications that can handle applications that require extremely high levels of reliabili...