MCH3310

Ordering number : ENN6863 MCH3310 P-Channel Silicon MOSFET MCH3310 Ultrahigh-Speed Switching Applications Features Package Dimensions unit : mm 2167 [MCH3310] 0.25 0.3 0.15 Low ON-resistance. Ultrahigh-speed switching. 4V drive. 3 1.6 2.1 1 0.65 2.0 2 0.25 Absolute Maximum Ratings at Ta=25°C Parameter Drain-to-Source Voltage Gate-to-Source Voltage Drain Current (DC) Drain Current (Pulse) Allowable Power Dissipation Channel Temperature Storage Temperature Symbol VDSS VGSS ID IDP PD Tch Tstg PW≤10µs, duty cycle≤1% Conditions 0.15 Specifications 1 : Gate 2 : Source 3 : Drain SANYO : MCPH3 Ratings -30 ± 20 --1.5 --6.0 0.9 150 --55 to +150 Unit V V A A W °C °C Mounted on a ceramic board (900mm2!0.8mm) Electrical Characteristics at Ta=25°C Parameter Drain-to-Source Breakdown Voltage Zero-Gate Voltage Drain Current Gate-to-Source Leakage Current Cutoff Voltage Forward Transfer Admittance Static Drain-to-Source On-State Resistance Input Capacitance Output Capacitance Reverse Transfer Capacitance Symbol V(BR)DSS IDSS IGSS VGS(off) yfs RDS(on)1 RDS(on)2 Ciss Coss Crss Conditions ID=--1mA, VGS=0 VDS=-30V, VGS=0 VGS=± 16V, VDS=0 VDS=-10V, ID=--1mA VDS=-10V, ID=--0.8A ID=--0.8A, VGS=-10V ID=--0.4A, VGS=-4V VDS=-10V, f=1MHz VDS=-10V, f=1MHz VDS=-10V, f=1MHz Ratings min --30 --1 ± 10 -1.2 1.0 1.5 210 360 185 30 20 270 500 --2.6 typ max Unit V µA µA V S mΩ mΩ pF pF pF Marking : JK 0.85 Continued on next page. Any and all SANYO products described or contained herein d...