Ordering number : ENN8018
MCH3314
MCH3314
Features
• Low ON-resistance. • Ultrahigh-speed switching. • 4V drive.
P-Ch...
Ordering number : ENN8018
MCH3314
MCH3314
Features
Low ON-resistance. Ultrahigh-speed switching. 4V drive.
P-Channel Silicon
MOSFET
General-Purpose Switching Device Applications
Specifications
Absolute Maximum Ratings at Ta=25°C
Parameter Drain-to-Source
Voltage Gate-to-Source
Voltage Drain Current (DC) Drain Current (Pulse) Allowable Power Dissipation Channel Temperature Storage Temperature
Symbol
VDSS VGSS
ID IDP PD Tch
Tstg
Conditions
PW≤10µs, duty cycle≤1% Mounted on a ceramic board (900mm2!0.8mm)
Ratings --60 ±20 --0.6 --2.4 0.8 150
--55 to +150
Unit V V A A W °C °C
Electrical Characteristics at Ta=25°C
Parameter
Symbol
Conditions
Drain-to-Source Breakdown
Voltage Zero-Gate
Voltage Drain Current Gate-to-Source Leakage Current Cutoff
Voltage Forward Transfer Admittance
Static Drain-to-Source On-State Resistance
Input Capacitance Output Capacitance Reverse Transfer Capacitance Turn-ON Delay Time Rise Time Turn-OFF Delay Time Fall Time Marking : JP
V(BR)DSS IDSS IGSS
VGS(off) yfs
RDS(on)1 RDS(on)2
Ciss
Coss
Crss
td(on) tr
td(off) tf
ID=--1mA, VGS=0 VDS=--60V, VGS=0 VGS=±16V, VDS=0 VDS=--10V, ID=--1mA VDS=--10V, ID=--0.3A ID=--0.3A, VGS=--10V ID=--0.2A, VGS=--4V VDS=--20V, f=1MHz VDS=--20V, f=1MHz VDS=--20V, f=1MHz See specified Test Circuit.
See specified Test Circuit.
See specified Test Circuit.
See specified Test Circuit.
min --60
--1.2 460
Ratings typ
max
Unit
V
--1 µA
±10 µA
--2.6 V
670 mS
1.3 1.7 Ω
1.6 2.3 Ω
73 pF
7 pF
4 pF
6 ns
...