MCH3339

Ordering number : ENN7414 MCH3339 P-Channel Silicon MOSFET MCH3339 Ultrahigh-Speed Switching Applications Features Low ON-resistance. Ultrahigh-speed switching. Package Dimensions unit : mm 2167A [MCH3339] 0.3 0.15 3 2.1 1.6 0.25 0.25 21 0.65 2.0 (Bottom view) Specifications Absolute Maximum Ratings at Ta=25°C Parameter Drain-to-Source Voltage Gate-to-Source Voltage Drain Current (DC) Drain Current (Pulse) Allowable Power Dissipation Channel Temperature Storage Temperature Symbol VDSS VGSS ID IDP PD Tch Tstg Electrical Characteristics at Ta=25°C Conditions PW≤10µs, duty cycle≤1% Mounted on a ceramic board (900mm2!0.8mm) Parameter Symbol Conditions Drain-to-Source Breakdown Voltage Zero-Gate Voltage Drain Current Gate-to-Source Leakage Current Cutoff Voltage Forward Transfer Admittance Static Drain-to-Source On-State Resistance Marking :YQ V(BR)DSS IDSS IGSS VGS(off) yfs RDS(on)1 RDS(on)2 RDS(on)3 ID=--1mA, VGS=0 VDS=--12V, VGS=0 VGS=±9.6V, VDS=0 VDS=--6V, ID=--1mA VDS=--6V, ID=--0.8A ID=--0.8A, VGS=--10V ID=--0.4A, VGS=--4.5V ID=--0.1A, VGS=--4V 0.85 0.07 3 12 (Top view) 1 : Gate 2 : Source 3 : Drain SANYO : MCPH3 Ratings --12 ±12 --1.5 --6 0.8 150 --55 to +150 Unit V V A A W °C °C min --12 --1 0.9 Ratings typ max Unit V --1 µA ±10 µA --2.4 V 1.4 S 200 270 mΩ 340 490 mΩ 370 530 mΩ Continued on next page. Any and all SANYO products described or contained herein do not have specifications that can handle applications that require extr...