Ordering number : ENA1397
MCH3474
SANYO Semiconductors
DATA SHEET
MCH3474
Features
• • •
N-Channel Silicon MOSFET
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Ordering number : ENA1397
MCH3474
SANYO Semiconductors
DATA SHEET
MCH3474
Features
N-Channel Silicon
MOSFET
General-Purpose Switching Device Applications
Low ON-resistance. Ultrahigh speed switching. 1.8V drive.
Specifications
Absolute Maximum Ratings at Ta=25°C
Parameter Drain-to-Source
Voltage Gate-to-Source
Voltage Drain Current (DC) Drain Current (Pulse) Allowable Power Dissipation Channel Temperature Storage Temperature Symbol VDSS VGSS ID IDP PD Tch Tstg PW≤10μs, duty cycle≤1% When mounted on ceramic substrate (900mm2×0.8mm) Conditions Ratings 30 ±12 4 16 1 150 --55 to +150 Unit V V A A W °C °C
Electrical Characteristics at Ta=25°C
Parameter Drain-to-Source Breakdown
Voltage Zero-Gate
Voltage Drain Current Gate-to-Source Leakage Current Cutoff
Voltage Forward Transfer Admittance Symbol V(BR)DSS IDSS IGSS VGS(off) | yfs | Conditions ID=1mA, VGS=0V VDS=30V, VGS=0V VGS=±8V, VDS=0V VDS=10V, ID=1mA VDS=10V, ID=2A 0.4 2.0 3.4 Ratings min 30 1 ±10 1.3 typ max Unit V μA μA V S
Marking : FF
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