MCH3476
Power MOSFET 20V, 125mΩ, 2A, Single N-Channel
www.onsemi.com
Features
• Low On-Resistance • 1.8V Drive • ESD D...
MCH3476
Power
MOSFET 20V, 125mΩ, 2A, Single N-Channel
www.onsemi.com
Features
Low On-Resistance 1.8V Drive ESD Diode-Protected Gate Pb-Free, Halogen Free and RoHS Compliance
VDSS 20V
RDS(on) Max 125mΩ@ 4.5V 190mΩ@ 2.5V 310mΩ@ 1.8V
ID Max 2A
Specifications
Absolute Maximum Ratings at Ta = 25°C
Parameter
Symbol
Drain to Source
Voltage
VDSS
Gate to Source
Voltage Drain Current (DC)
VGSS ID
Drain Current (Pulse) PW≤10μs, duty cycle≤1%
IDP
Power Dissipation
When mounted on ceramic substrate (900mm2 × 0.8mm)
PD
Junction Temperature
Tj
Storage Temperature
Tstg
Thermal Resistance Ratings
Parameter
Junction to Ambient When mounted on ceramic substrate (900mm2 × 0.8mm)
Symbol RθJA
Value 20
±12 2
8
Unit V V A
A
0.8
150 −55 to +150
W
°C °C
Value
Unit
156.2
°C/W
Electrical Connection
N-Channel 3
1 1 : Gate 2 : Source 3 : Drain
2
Packing Type : TL Marking
FH
TL
FH : Device Code
LOT No. LOT No.
Stresses exceeding those listed in the Maximum Ratings table may damage the device. If any of these limits are exceeded, device functionality should not be assumed, damage may occur and reliability may be affected.
ORDERING INFORMATION
See detailed ordering and shipping information on page 5 of this data sheet.
© Semiconductor Components Industries, LLC, 2015 March 2015 - Rev. 2
1
Publication Order Number : MCH3476/D
Electrical Characteristics at Ta = 25°C
Parameter
Symbol
Drain to Source Breakdown
Voltage Zero-Gate
Voltage Drain Current Gate to Sourc...