MCH5702

Ordering number : ENN7076 MCH5702 TR : NPN Epitaxial Planar Silicon Transistor SBD : Schottky Barrier Diode MCH5702 DC / DC Converter Applications Features Package Dimensions 2.1 1.6 Composite type with an NPN transistor and a Schottky unit : mm barrier diode contained in one package facilitating 2200 high-density mounting. The MCH5702 consists of two chips which are equivalent to the MCH6201 and the SBS006, respectively. Ultrasmall package (0.85mm high when mounted) facilitates miniaturization in end products. 0.25 0.25 [MCH5702] 0.3 4 5 0.15 0.65 2.0 0.07 3 2 1 5 4 Specifications Absolute Maximum Ratings at Ta=25°C Parameter [TR] Collector-to-Base Voltage Collector-to-Emitter Voltage Emitter-to-Base Voltage Collector Current Collector Current (Pulse) Base Current Collector Dissipation Junction Temperature Storage Temperature [SBD] Repetitive Peak Reverse Voltage Non-repetitive Peak Reverse Surge Voltage Average Recified Current Surge Current Junction Temperature Storage Temperature VRRM VRSM IO IFSM Tj Tstg 50Hz sine wave, 1cycle VCBO VCEO VEBO IC ICP IB PC Tj Tstg Mounted on a ceramic board (600mm2!0.8mm) Symbol Conditions 0.85 1 : Base 2 : Emitter 3 : Anode 4 : Cathode 5 : Collector SANYO : MCPH5 1 2 3 Ratings 15 15 5 1.5 3 300 0.7 150 --55 to +125 30 30 0.7 10 --55 to +125 --55 to +125 Unit V V V A A mA W °C °C V V A A °C °C Marking : PC Any and all SANYO products described or contained herein do not have specifications that can handle ap...