Ordering number : ENN6961
MCH5802
MOSFET : P-Channel Silicon MOSFET SBD : Schottky Barrier Diode
MCH5802
DC / DC Conv...
Ordering number : ENN6961
MCH5802
MOSFET : P-Channel Silicon
MOSFET SBD : Schottky Barrier Diode
MCH5802
DC / DC Converter Applications
Features
Package Dimensions
Composite type with a P-Channel Sillicon
MOSFET unit : mm (MCH3308) and a Schottky Barrier Diode (SBS006M) 2195 contained in one package facilitating high-density mounting. [
MOSFET] Low ON-resistance. Ultrahigh-speed switching. 4V drive. [SBD] Short reverse recovery time. Low forward
voltage.
0.25 2.1 1.6 0.25
[MCH5802]
0.3 0.15
4
5
0.65 2.0
0.07
3
2
1
5
4
0.85
1 : Gate 2 : Source 3 : Anode 4 : Cathode 5 : Drain SANYO : MCPH5
1
2
3
Specifications
Absolute Maximum Ratings at Ta=25°C
Parameter [
MOSFET] Drain-to-Source
Voltage Gate-to-Source
Voltage Drain Current (DC) Drain Current (Pulse) Allowable Power Dissipation Channel Temperature Storage Temperature [SBD] Repetitive Peak Reverse
Voltage Nonrepetitive Peak Reverse Surge
Voltage Average Output Current Surge Forward Current Junction Temperature Storage Temperature VRRM VRSM IO IFSM Tj Tstg 50Hz sine wave, 1 cycle 30 30 0.5 10 --55 to +125 --55 to +125 V V A A °C °C VDSS VGSS ID IDP PD Tch Tstg PW≤10µs, duty cycle≤1% Mounted on a ceramic board (900mm2!0.8mm) 1unit -30 ± 20 --1 --4 0.8 150 --55 to +125 V V A A W °C °C Symbol Conditions Ratings Unit
Marking : QB
Any and all SANYO products described or contained herein do not have specifications that can handle applications that require extremely high levels of reliability, such as l...