MCH5805

Ordering number : ENN7125 MCH5805 MOSFET : P-Channel Silicon MOSFET SBD : Schottky Barrier Diode MCH5805 DC / DC Converter Applications Features Composite type with a P-channel sillicon MOSFET (MCH3314) and a Schottky barrier diode (SB01-05) contained in one package facilitating high-density mounting. [MOSFET] Low ON-resistance. Ultrahigh-speed switching. 4V drive. [SBD] Short reverse recovery time. Low forward voltage. Package Dimensions unit : mm 2195 [MCH5805] 0.3 45 0.15 2.1 1.6 0.25 0.25 3 21 0.65 2.0 0.85 0.07 1 : Gate 5 4 2 : Source 3 : Anode 4 : Cathode 5 : Drain 1 2 3 SANYO : MCPH5 Specifications Absolute Maximum Ratings at Ta=25°C Parameter [MOSFET] Drain-to-Source Voltage Gate-to-Source Voltage Drain Current (DC) Drain Current (Pulse) Allowable Power Dissipation Channel Temperature Storage Temperature [SBD] Repetitive Peak Reverse Voltage Nonrepetitive Peak Reverse Surge Voltage Average Output Current Surge Forward Current Junction Temperature Storage Temperature Marking : QE Symbol VDSS VGSS ID IDP PD Tch Tstg VRRM VRSM IO IFSM Tj Tstg Conditions PW≤10µs, duty cycle≤1% Mounted on a ceramic board (900mm2!0.8mm) 1unit 50Hz sine wave, 1 cycle Ratings --60 ±20 --0.6 --2.4 0.8 150 --55 to +125 50 50 0.1 2 --55 to +125 --55 to +125 Unit V V A A W °C °C V V A A °C °C Any and all SANYO products described or contained herein do not have specifications that can handle applications that require extremely high levels of reliability, such as lif...