MCH5839

MCH5839 Power MOSFET –20V, 266mΩ, –1.5A, Single P-Channel with Schottky Diode MCH5839 is a P-Channel Power MOSFET, with Schottky Diode for general-purpose switching device applications. Features  Composite type with a P-Channel silicon MOSFET and a schottky barrier diode contained in one package facilitating high-density mounting  Pb-Free, Halogen Free and RoHS compliance [MOSFET]  Low On-resistance   ESD Diode-Protected Gate  1.8V drive [SBD]  Short reverse recovery time  Low forward voltage Typical Applications  DC/DC Converter SPECIFICATIONS ABSOLUTE MAXIMUM RATING at Ta = 25C (Note 1) Parameter Symbol Value Unit [MOSFET] Drain to Source Voltage Gate to Source Voltage Drain Current (DC) VDSS VGSS ID 20 V 10 V 1.5 A Drain Current (Pulse) PW  10s, duty cycle  1% IDP 6 A Power Dissipation When mounted on ceramic substrate (1000mm2  0.8mm) 1unit Junction Temperature PD Tj 0.8 W 150 C Storage Temperature Tstg 55 to +125 C [SBD] Repetitive Peak Reverse Voltage Nonrepetitive Peak Reverse Surge Voltage Average Output Current VRRM VRSM IO 15 V 15 V 1A Surge Forward Current 50Hz sine wave, 1cycle IFSM 3A Junction Temperature Tj 55 to +125 C Storage Temperature Tstg 55 to +125 C Note 1 : Stresses exceeding those listed in the Maximum Ratings table may damage the device. If any of these limits are exceeded, device functionality should not be assumed, damage may occur and reliability may be affected. THERMAL RES...