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MCH6102 Datasheet

Part Number MCH6102
Manufacturers Sanyo
Logo Sanyo
Description DC/DC Converter Applications
Datasheet MCH6102 DatasheetMCH6102 Datasheet (PDF)

Ordering number:ENN6480 PNP/NPN Epitaxial Planar Silicon Transistors MCH6102/MCH6202 DC/DC Converter Applications Applications · Relay drivers, lamp drivers, motor drivers. Package Dimensions unit:mm 2177 [MCH6102/MCH6202] 0.25 0.3 6 5 4 0.15 Features · Adoption of MBIT processes. · Large current capacitance. · Low collector-to-emitter saturation voltage. · High-speed switching. · Ultrasmall package facilitates miniaturization in end products (mounting height : 0.85mm). · High allowable powe.

  MCH6102   MCH6102






Part Number MCH6102
Manufacturers ON Semiconductor
Logo ON Semiconductor
Description Bipolar Transistor
Datasheet MCH6102 DatasheetMCH6102 Datasheet (PDF)

Ordering number : EN6480C MCH6102/MCH6202 Bipolar Transistor (–)30V, (–)1.5A, Low VCE(sat), (PNP)NPN Single MCPH6 http://onsemi.com Applicaitons • Relay drivers, lamp drivers, motor drivers, flash Features • Adoption of MBIT processes • Large current capacity • Low collector-to-emitter saturation voltage • High-speed switching • Ultrasmall package facilitates miniaturization in end products (mounting height : 0.85mm) • High allowable power dissipation Specifications ( ) : MCH6102 Absol.

  MCH6102   MCH6102







DC/DC Converter Applications

Ordering number:ENN6480 PNP/NPN Epitaxial Planar Silicon Transistors MCH6102/MCH6202 DC/DC Converter Applications Applications · Relay drivers, lamp drivers, motor drivers. Package Dimensions unit:mm 2177 [MCH6102/MCH6202] 0.25 0.3 6 5 4 0.15 Features · Adoption of MBIT processes. · Large current capacitance. · Low collector-to-emitter saturation voltage. · High-speed switching. · Ultrasmall package facilitates miniaturization in end products (mounting height : 0.85mm). · High allowable power dissipation. 1.6 1 2.0 0.25 2 3 0.65 2.1 ( ) : MCH6102 Absolute Maximum Ratings at Ta = 25˚C Parameter Collector-to-Base Voltage Collector-to-Emitter Voltage Emitter-to-Base Voltage Collector Current Collector Current (Pulse) Base Current Collector Dissipation Junction Temperature Storage Temperature Symbol VCBO VCEO VEBO IC ICP IB PC Tj Tstg Mounted on a ceramic board (600mm2×0.8mm) Conditions 0.15 Specifications 1 : Collector 2 : Collector 3 : Base 4 : Emitter 5 : Collector 6 : Collector SANYO : MCPH6 0.85 Ratings (–30)40 (–)30 (–)5 (–)1.5 (–)3 (–)300 1.0 150 –55 to +150 Unit V V V A A mA W ˚C ˚C Electrical Characteristics at Ta = 25˚C Parameter Collector Cutoff Current Emitter Cutoff Current DC Current Gain Gain-Bandwidth Product Output Capacitance Symbol ICBO IEBO hFE fT Cob VCB=(–)30V, IE=0 VEB=(–)4V, IC=0 VCE=(–)2V, IC=(–)100mA VCE=(–)10V, IC=(–)300mA VCB=(–)10V, f=1MHz 200 (450) 500 (9)8 Conditions Ratings min typ max (–)0.1 (–)0.1 560 MHz MHz pF Unit µA µA Conti.


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