Ordering number : ENN7716
MCH6306
MCH6306
Features
• Low ON-resistance. • Ultrahigh-speed switching. • 4V drive.
P-Ch...
Ordering number : ENN7716
MCH6306
MCH6306
Features
Low ON-resistance. Ultrahigh-speed switching. 4V drive.
P-Channel Silicon
MOSFET
General-Purpose Switching Device
Applications
Specifications
Absolute Maximum Ratings at Ta=25°C
Parameter Drain-to-Source
Voltage Gate-to-Source
Voltage Drain Current (DC) Drain Current (Pulse) Allowable Power Dissipation Channel Temperature Storage Temperature
Symbol
VDSS VGSS
ID IDP PD Tch
Tstg
Conditions
PW≤10µs, duty cycle≤1% Mounted on a ceramic board (900mm2!0.8mm)
Ratings --30 ±20 --4 --16 1.5 150
--55 to +150
Unit V V A A W °C °C
Electrical Characteristics at Ta=25°C
Parameter
Symbol
Conditions
Drain-to-Source Breakdown
Voltage Zero-Gate
Voltage Drain Current Gate-to-Source Leakage Current Cutoff
Voltage Forward Transfer Admittance
Static Drain-to-Source On-State Resistance
Input Capacitance Output Capacitance Reverse Transfer Capacitance Turn-ON Delay Time Rise Time Turn-OFF Delay Time Fall Time Marking : JF
V(BR)DSS IDSS IGSS
VGS(off) yfs
RDS(on)1 RDS(on)2 RDS(on)3
Ciss
Coss
Crss
td(on) tr
td(off) tf
ID=--1mA, VGS=0 VDS=--30V, VGS=0 VGS=±16V, VDS=0 VDS=--10V, ID=--1mA VDS=--10V, ID=--2A ID=--2A, VGS=--10V ID=--1A, VGS=--4.5V ID=--1A, VGS=--4V VDS=--10V, f=1MHz VDS=--10V, f=1MHz VDS=--10V, f=1MHz See specified Test Circuit
See specified Test Circuit
See specified Test Circuit
See specified Test Circuit
min --30
--1.2 2.5
Ratings typ
max
Unit
V
--1 µA
±10 µA
--2.6 V
3.6 S
53 69 mΩ
92 129 mΩ
105 147 mΩ
...