MCH6337

Ordering number : ENA0959 MCH6337 SANYO Semiconductors DATA SHEET MCH6337 P-Channel Silicon MOSFET General-Purpose Switching Device Applications Features Low ON-resistance. Ultrahigh-speed switching. 1.8V drive Specifications Absolute Maximum Ratings at Ta=25°C Parameter Drain-to-Source Voltage Gate-to-Source Voltage Drain Current (DC) Drain Current (Pulse) Allowable Power Dissipation Channel Temperature Storage Temperature Symbol VDSS VGSS ID IDP PD Tch Tstg Conditions PW≤10μs, duty cycle≤1% When mounted on ceramic substrate (1200mm2✕0.8mm) Ratings --20 ±10 --4.5 --18 1.5 150 --55 to +150 Unit V V A A W °C °C Electrical Characteristics at Ta=25°C Parameter Symbol Conditions Drain-to-Source Breakdown Voltage Zero-Gate Voltage Drain Current Gate-to-Source Leakage Current Cutoff Voltage Forward Transfer Admittance Static Drain-to-Source On-State Resistance Marking : YL V(BR)DSS IDSS IGSS VGS(off) ⏐yfs⏐ RDS(on)1 RDS(on)2 RDS(on)3 ID=--1mA, VGS=0V VDS=--20V, VGS=0V VGS=±8V, VDS=0V VDS=--10V, ID=--1mA VDS=--10V, ID=--3A ID=--3A, VGS=--4.5V ID=--1.5A, VGS=--2.5V ID=--0.5A, VGS=--1.8V min --20 --0.4 3.5 Ratings typ max Unit V --1 μA ±10 μA --1.3 V 5.9 S 37 49 mΩ 53 75 mΩ 85 130 mΩ Continued on next page. Any and all SANYO Semiconductor Co.,Ltd. products described or contained herein are, with regard to "standard application", intended for the use as general electronics equipment (home appliances, AV equipment, communication device, office equipm...