MCH6341

Ordering number : ENA1272B MCH6341 Power MOSFET –30V, 59mΩ, –5A, Single P-Channel http://onsemi.com Features Low RDS(on) Pb-free and RoHS Compliance 4V drive ESD diode-Protected gate Specifications Absolute Maximum Ratings at Ta=25°C Parameter Drain-to-Source Voltage Gate-to-Source Voltage Drain Current (DC) Drain Current (Pulse) Power Dissipation Junction Temperature Storage Temperature Symbol VDSS VGSS ID IDP PD Tj Tstg Conditions PW≤10μs, duty cycle≤1% When mounted on ceramic substrate (1200mm2×0.8mm) Ratings --30 ±20 --5 --20 1.5 150 --55 to +150 Unit V V A A W °C °C Stresses exceeding those listed in the Maximum Ratings table may damage the device. If any of these limits are exceeded, device functionality should not be assumed, damage may occur and reliability may be affected. Package Dimensions unit : mm (typ) 7022A-009 2.0 654 0.15 MCH6341-TL-E MCH6341-TL-H MCH6341-TL-W 0 to 0.02 Product & Package Information Package : MCPH6 JEITA, JEDEC : SC-88, SC-70-6, SOT-363 Minimum Packing Quantity : 3,000 pcs./reel Packing Type : TL Marking YQ 2.1 0.07 0.85 0.25 1.6 0.25 LOT No. LOT No. 1 23 0.65 0.3 123 654 1 : Drain 2 : Drain 3 : Gate 4 : Source 5 : Drain 6 : Drain MCPH6 TL Electrical Connection 1, 2, 5, 6 3 4 ORDERING INFORMATION See detailed ordering and shipping information on page 2 of this data sheet. Semiconductor Components Industries, LLC, 2014 July, 2014 72814HK TC-00002819/62012TKIM/73008TIIM PE No. A1272-1...