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MCH6342 Datasheet

Part Number MCH6342
Manufacturers ON Semiconductor
Logo ON Semiconductor
Description Power MOSFET
Datasheet MCH6342 DatasheetMCH6342 Datasheet (PDF)

MCH6342 Power MOSFET –30V, 73mΩ, –4.5A, Single P-Channel This Power MOSFET is produced using ON Semiconductor’s trench technology, which is specifically designed to minimize gate charge and low on resistance. This device is suitable for applications with low gate charge driving or low on resistance requirements. Features • Low On-Resistance • 1.8V drive • High Speed Switching • ESD Diode-Protected Gate • Pb-Free, Halogen Free and RoHS compliance Typical Applications • DC/DC Converter SPECIFI.

  MCH6342   MCH6342






Part Number MCH6344
Manufacturers ON Semiconductor
Logo ON Semiconductor
Description Power MOSFET
Datasheet MCH6342 DatasheetMCH6344 Datasheet (PDF)

MCH6344 Power MOSFET –30V, 150mΩ, –2A, Single P-Channel This Power MOSFET is produced using ON Semiconductor’s trench technology, which is specifically designed to minimize gate charge and low on resistance. This device is suitable for applications with low gate charge driving or low on resistance requirements. Features • Low On-Resistance • 4V drive • Pb-Free, Halogen Free and RoHS compliance Typical Applications • Load Switch SPECIFICATIONS ABSOLUTE MAXIMUM RATING at Ta = 25°C (Note 1, 2) .

  MCH6342   MCH6342







Part Number MCH6341
Manufacturers ON Semiconductor
Logo ON Semiconductor
Description Power MOSFET
Datasheet MCH6342 DatasheetMCH6341 Datasheet (PDF)

Ordering number : ENA1272B MCH6341 Power MOSFET –30V, 59mΩ, –5A, Single P-Channel http://onsemi.com Features • Low RDS(on) • Pb-free and RoHS Compliance • 4V drive • ESD diode-Protected gate Specifications Absolute Maximum Ratings at Ta=25°C Parameter Drain-to-Source Voltage Gate-to-Source Voltage Drain Current (DC) Drain Current (Pulse) Power Dissipation Junction Temperature Storage Temperature Symbol VDSS VGSS ID IDP PD Tj Tstg Conditions PW≤10μs, duty cycle≤1% When mounted .

  MCH6342   MCH6342







Part Number MCH6341
Manufacturers Sanyo
Logo Sanyo
Description P-Channel Silicon MOSFET
Datasheet MCH6342 DatasheetMCH6341 Datasheet (PDF)

Ordering number : ENA1272A MCH6341 SANYO Semiconductors DATA SHEET MCH6341 Features • Low ON-resistance • Halogen free compliance P-Channel Silicon MOSFET General-Purpose Switching Device Applications • 4V drive • Protection diode in Specifications Absolute Maximum Ratings at Ta=25°C Parameter Symbol Drain-to-Source Voltage Gate-to-Source Voltage Drain Current (DC) Drain Current (Pulse) Allowable Power Dissipation Channel Temperature VDSS VGSS ID IDP PD Tch Storage Temperature Tstg C.

  MCH6342   MCH6342







Power MOSFET

MCH6342 Power MOSFET –30V, 73mΩ, –4.5A, Single P-Channel This Power MOSFET is produced using ON Semiconductor’s trench technology, which is specifically designed to minimize gate charge and low on resistance. This device is suitable for applications with low gate charge driving or low on resistance requirements. Features • Low On-Resistance • 1.8V drive • High Speed Switching • ESD Diode-Protected Gate • Pb-Free, Halogen Free and RoHS compliance Typical Applications • DC/DC Converter SPECIFICATIONS ABSOLUTE MAXIMUM RATING at Ta = 25°C (Note 1) Parameter Symbol Value Unit Drain to Source Voltage VDSS −30 V Gate to Source Voltage VGSS ±10 V Drain Current (DC) ID −4.5 A Drain Current (Pulse) PW ≤ 10μs, duty cycle ≤ 1% IDP −18 A Power Dissipation When mounted on ceramic substrate (1500mm2 × 0.8mm) PD 1.5 W Junction Temperature Tj 150 °C Storage Temperature Tstg −55 to +150 °C Note 1 : Stresses exceeding those listed in the Maximum Ratings table may damage the device. If any of these limits are exceeded, device functionality should not be assumed, damage may occur and reliability may be affected. THERMAL RESISTANCE RATINGS Parameter Junction to Ambient When mounted on ceramic substrate (1500mm2 × 0.8mm) Symbol RθJA Value Unit 83.3 °C/W www.onsemi.com VDSS −30V RDS(on) Max 73mΩ@ −4.5V 99mΩ@ −2.5V 155mΩ@ −1.8V ID Max −4.5A ELECTRICAL CONNECTION P-Channel 1, 2, 5, 6 3 4 PACKING TYPE : TL 1 : Drain 2 : Drain 3 : Gate 4 : Source 5 : Drain 6 : .


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