MCH6401

Ordering number : ENN6779 MCH6401 N-Channel Silicon MOSFET MCH6401 Ultrahigh-Speed Switching Applications Features Package Dimensions unit : mm 2193 [MCH6401] 0.25 0.3 0.15 Low ON-resistance. Ultrahigh-speed switching. 2.5V drive. 6 5 4 1.6 2.1 1 0.25 2 3 0.65 2.0 Absolute Maximum Ratings at Ta=25°C Parameter Drain-to-Source Voltage Gate-to-Source Voltage Drain Current (DC) Drain Current (Pulse) Allowable Power Dissipation Channel Temperature Storage Temperature Symbol VDSS VGSS ID IDP PD Tch Tstg PW≤10µs, duty cycle≤1% Conditions 0.15 Specifications 1 : Drain 2 : Drain 3 : Gate 4 : Source 5 : Drain 6 : Drain SANYO : MCPH6 Ratings 20 ±10 4 16 1.5 150 --55 to +150 Unit V V A A W °C °C Mounted on a ceramic board (900mm2!0.8mm) Electrical Characteristics at Ta=25°C Parameter Drain-to-Source Breakdown Voltage Zero-Gate Voltage Drain Current Gate-to-Source Leakage Current Cutoff Voltage Forward Transfer Admittance Static Drain-to-Source On-State Resistance Input Capacitance Output Capacitance Reverse Transfer Capacitance Symbol V(BR)DSS IDSS IGSS VGS(off) yfs RDS(on)1 RDS(on)2 Ciss Coss Crss Conditions ID=1mA, VGS=0 VDS=20V, VGS=0 VGS=± 8V, VDS=0 VDS=10V, ID=1mA VDS=10V, ID=2A ID=2A, VGS=4V ID=1A, VGS=2.5V VDS=10V, f=1MHz VDS=10V, f=1MHz VDS=10V, f=1MHz Ratings min 20 1 ±10 0.4 4.3 6.2 45 60 370 120 80 59 84 1.3 typ max Unit V µA µA V S mΩ mΩ pF pF pF Marking : KA 0.85 Continued on next page. Any and all SANYO products described or contained herein do n...