MCH6406

www.DataSheet.co.kr Ordering number : ENN7297 MCH6406 N-Channl Silicon MOSFET MCH6406 Ultrahigh-Speed Switching Applications Preliminary Features Package Dimensions unit : mm 2193A [MCH6406] 0.25 0.3 4 5 6 0.15 Low ON-resistance. Ultrahigh-speed switcing. 4V drive. 2.1 1.6 0.25 3 2 0.65 2.0 0.07 1 6 5 4 (Bottom view) Specifications Absolute Maximum Ratings at Ta=25°C Parameter Drain-to-Source Voltage Gate-to-Source Voltage Drain Current (DC) Drain Current (Pulse) Allowable Power Dissipation Channel Temperature Storage Temperature Symbol VDSS VGSS ID IDP PD Tch Tstg PW≤10µs, duty cycle≤1% Conditions 1 : Drain 2 : Drain 3 : Gate 4 : Source 5 : Drain 6 : Drain SANYO : MCPH6 Unit 30 ±20 5 20 1.5 150 --55 to +150 V V A A W °C °C 0.85 1 2 3 (Top view) Ratings Mounted on a ceramic board(900mm2!0.8mm) Electrical Characteristics at Ta=25°C Parameter Drain-to-Source Breakdown Voltage Zero-Gate Voltage Drain Current Gate-to-Source Leakage Current Cutoff Voltage Forward Transfer Admittance Static Drain-to-Source On-State Resistance Input Capacitance Output Capacitance Reverse Transfer Capacitance Symbol V(BR)DSS IDSS IGSS VGS(off) yfs RDS(on)1 RDS(on)2 Ciss Coss Crss Conditions ID=1mA, VGS=0 VDS=30V, VGS=0 VGS= ±16V, VDS=0 VDS=10V, ID=1mA VDS=10V, ID=2.5A ID=2.5A, VGS=10V ID=1.2A, VGS=4V VDS=10V, f=1MHz VDS=10V, f=1MHz VDS=10V, f=1MHz Ratings min 30 1 ±10 1.2 2.8 4 37 63 370 85 47 48 88 2.6 typ max Unit V µA µA V S mΩ mΩ pF pF pF Marking : KF Continued...