www.DataSheet.co.kr
Ordering number : ENA1264
MCH6421
SANYO Semiconductors
DATA SHEET
MCH6421
Features
• • •
N-Cha...
www.DataSheet.co.kr
Ordering number : ENA1264
MCH6421
SANYO Semiconductors
DATA SHEET
MCH6421
Features
N-Channel Silicon
MOSFET
General-Purpose Switching Device Applications
Low ON-resistance. Ultrahigh-speed switching. 1.8V drive.
Specifications
Absolute Maximum Ratings at Ta=25°C
Parameter Drain-to-Source
Voltage Gate-to-Source
Voltage Drain Current (DC) Drain Current (Pulse) Allowable Power Dissipation Channel Temperature Storage Temperature Symbol VDSS VGSS ID IDP PD Tch Tstg PW≤10μs, duty cycle≤1% When mounted on ceramic substrate (1200mm2✕0.8mm) Conditions Ratings 20 ±12 5.5 22 1.5 150 --55 to +150 Unit V V A A W °C °C
Electrical Characteristics at Ta=25°C
Parameter Drain-to-Source Breakdown
Voltage Zero-Gate
Voltage Drain Current Gate-to-Source Leakage Current Cutoff
Voltage Forward Transfer Admittance Static Drain-to-Source On-State Resistance Symbol V(BR)DSS IDSS IGSS VGS(off) ⏐yfs⏐ RDS(on)1 RDS(on)2 RDS(on)3 Conditions ID=1mA, VGS=0V VDS=20V, VGS=0V VGS=±8V, VDS=0V VDS=10V, ID=1mA VDS=10V, ID=2A ID=2A, VGS=4.5V ID=1A, VGS=2.5V ID=0.5A, VGS=1.8V 0.4 2.0 3.8 29 43 69 38 61 99 Ratings min 20 1 ±10 1.3 typ max Unit V μA μA V S mΩ mΩ mΩ
Marking : KV
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Any and all SANYO Semiconductor Co.,Ltd. products described or contained herein are, with regard to "standard application", intended for the use as general electronics equipment (home appliances, AV equipment, communication device, office equipment, industrial equipment etc.). The pr...