MCH6431
Power MOSFET 30V, 55mΩ, 5A, Single N-Channel
www.onsemi.com
Features
• Low On-Resistance • 4V Drive • ESD Diod...
MCH6431
Power
MOSFET 30V, 55mΩ, 5A, Single N-Channel
www.onsemi.com
Features
Low On-Resistance 4V Drive ESD Diode-Protected Gate Pb-Free, Halogen Free and RoHS Compliance
VDSS 30V
RDS(on) Max 55mΩ@ 10V 91mΩ@ 4.5V 109mΩ@ 4V
ID Max 5A
Specifications
Absolute Maximum Ratings at Ta = 25°C
Parameter
Symbol
Drain to Source
Voltage
VDSS
Gate to Source
Voltage Drain Current (DC)
VGSS ID
Drain Current (Pulse) PW≤10μs, duty cycle≤1%
IDP
Power Dissipation
When mounted on ceramic substrate (1200mm2 × 0.8mm)
PD
Junction Temperature
Tj
Storage Temperature
Tstg
Thermal Resistance Ratings
Parameter
Junction to Ambient When mounted on ceramic substrate (1200mm2 × 0.8mm)
Symbol RθJA
Value 30
±20 5
20
Unit V V A
A
1.5
150 −55 to +150
W
°C °C
Value
Unit
83.3
°C/W
Electrical Connection
N-Channel 1, 2, 5, 6
1 : Drain 3 2 : Drain
3 : Gate 4 : Source 5 : Drain 4 6 : Drain
Packing Type : TL Marking
ZF
TL
LOT No. LOT No.
Stresses exceeding those listed in the Maximum Ratings table may damage the device. If any of these limits are exceeded, device functionality should not be assumed, damage may occur and reliability may be affected.
ORDERING INFORMATION
See detailed ordering and shipping information on page 5 of this data sheet.
© Semiconductor Components Industries, LLC, 2015 March 2015 - Rev. 3
1
Publication Order Number : MCH6431/D
Electrical Characteristics at Ta = 25°C
Parameter
Symbol
Drain to Source Breakdown
Voltage Zero-Gate
Voltage Drain Curre...