MCH6438

www.DataSheet.co.kr Ordering number : ENA0889 MCH6438 SANYO Semiconductors DATA SHEET N-Channel Silicon MOSFET MCH6438 Features General-Purpose Switching Device Applications 1.5V drive. Specifications Absolute Maximum Ratings at Ta=25°C Parameter Drain-to-Source Voltage Gate-to-Source Voltage Drain Current (DC) Drain Current (Pulse) Allowable Power Dissipation Channel Temperature Storage Temperature Symbol VDSS VGSS ID IDP PD Tch Tstg PW≤10µs, duty cycle≤1% Mounted on a ceramic board (1200mm2✕0.8mm) Conditions Ratings 60 ±10 200 800 1.2 150 --55 to +150 Unit V V mA mA W °C °C Electrical Characteristics at Ta=25°C Parameter Drain-to-Source Breakdown Voltage Zero-Gate Voltage Drain Current Gate-to-Source Leakage Current Cutoff Voltage Forward Transfer Admittance Static Drain-to-Source On-State Resistance Input Capacitance Output Capacitance Reverse Transfer Capacitance Symbol V(BR)DSS IDSS IGSS VGS(off) yfs RDS(on)1 RDS(on)2 RDS(on)3 Ciss Coss Crss Conditions ID=1mA, VGS=0V VDS=60V, VGS=0V VGS=±8V, VDS=0V VDS=10V, ID=100µA VDS=10V, ID=100mA ID=100mA, VGS=4V ID=50mA, VGS=2.5V ID=10mA, VGS=1.8V VDS=20V, f=1MHz VDS=20V, f=1MHz VDS=20V, f=1MHz Ratings min 60 1 ±10 0.4 280 480 2.2 2.4 3.5 26 5.9 3.2 2.9 3.4 7.0 1.3 typ max Unit V µA µA V mS Ω Ω Ω pF pF pF Marking : ZM Continued on next page. Any and all SANYO Semiconductor Co.,Ltd. products described or contained herein are, with regard to "standard application", intended for the use as general electronics equipment ...