MCH6444

MCH6444 Power MOSFET 35V, 98mΩ, 2.5A, Single N-Channel This Power MOSFET is produced using ON Semiconductor’s trench technology, which is specifically designed to minimize gate charge and low on resistance. This device is suitable for applications with low gate charge driving or low on resistance requirements. Features Low On-Resistance 4V drive ESD Diode-Protected Gate Pb-Free, Halogen Free and RoHS compliance Typical Applications Load Switch Motor Drive SPECIFICATIONS ABSOLUTE MAXIMUM RATING at Ta = 25°C (Note 1) Parameter Symbol Value Unit Drain to Source Voltage VDSS 35 V Gate to Source Voltage VGSS ±20 V Drain Current (DC) ID 2.5 A Drain Current (Pulse) PW ≤ 10μs, duty cycle ≤ 1% IDP 10 A Power Dissipation When mounted on ceramic substrate (900mm2 × 0.8mm) Junction Temperature PD Tj 0.8 W 150 °C Storage Temperature Tstg −55 to +150 °C Note 1 : Stresses exceeding those listed in the Maximum Ratings table may damage the device. If any of these limits are exceeded, device functionality should not be assumed, damage may occur and reliability may be affected. THERMAL RESISTANCE RATINGS Parameter Junction to Ambient When mounted on ceramic substrate (900mm2 × 0.8mm) Symbol RθJA Value Unit 156.2 °C/W www.onsemi.com VDSS 35V RDS(on) Max 98mΩ@ 10V 166mΩ@ 4.5V 201mΩ@ 4V ID Max 2.5A ELECTRICAL CONNECTION N-Channel 1, 2, 5, 6 3 1 : Drain 2 : Drain 3 : Gate 4 : Source 5 : Drain 4 6 : Drain PACKING TYPE : TL MARKING LOT No. L...