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MCH6448 Datasheet

Part Number MCH6448
Manufacturers ON Semiconductor
Logo ON Semiconductor
Description Power MOSFET
Datasheet MCH6448 DatasheetMCH6448 Datasheet (PDF)

MCH6448 Power MOSFET 20V, 22mΩ, 8A, Single N-Channel www.onsemi.com Features • Low On-Resistance • 1.2V Drive • ESD Diode-Protected Gate • Pb-Free, Halogen Free and RoHS Compliance VDSS 20V RDS(on) Max 22mΩ@ 4.5V 28mΩ@ 2.5V 39mΩ@ 1.8V 124mΩ@ 1.2V ID Max 8A Specifications Absolute Maximum Ratings at Ta = 25°C Parameter Symbol Drain to Source Voltage VDSS Gate to Source Voltage Drain Current (DC) VGSS ID Drain Current (Pulse) PW≤10μs, duty cycle≤1% IDP Power Dissipation When mounte.

  MCH6448   MCH6448






Part Number MCH6445
Manufacturers ON Semiconductor
Logo ON Semiconductor
Description N-Channel Power MOSFET
Datasheet MCH6448 DatasheetMCH6445 Datasheet (PDF)

Ordering number : ENA1566B MCH6445 N-Channel Power MOSFET 60V, 4A, 78mΩ, Single MCPH6 http://onsemi.com Features • 4V drive • Low ON-resistance • Protection diode in Specifications Absolute Maximum Ratings at Ta=25°C Parameter Drain-to-Source Voltage Gate-to-Source Voltage Drain Current (DC) Drain Current (Pulse) Allowable Power Dissipation Channel Temperature Storage Temperature Symbol VDSS VGSS ID IDP PD Tch Tstg Conditions PW≤10μs, duty cycle≤1% When mounted on ceramic substr.

  MCH6448   MCH6448







Part Number MCH6445
Manufacturers Sanyo Semicon Device
Logo Sanyo Semicon Device
Description N-Channel Silicon MOSFET
Datasheet MCH6448 DatasheetMCH6445 Datasheet (PDF)

www.DataSheet.co.kr Ordering number : ENA1566 MCH6445 SANYO Semiconductors DATA SHEET MCH6445 Features • • N-Channel Silicon MOSFET General-Purpose Switching Device Applications 4V drive. Low ON-resistance. Specifications Absolute Maximum Ratings at Ta=25°C Parameter Drain-to-Source Voltage Gate-to-Source Voltage Drain Current (DC) Drain Current (Pulse) Allowable Power Dissipation Channel Temperature Storage Temperature Symbol VDSS VGSS ID IDP PD Tch Tstg PW≤10μs, duty cycle≤1% When moun.

  MCH6448   MCH6448







Part Number MCH6444
Manufacturers ON Semiconductor
Logo ON Semiconductor
Description Power MOSFET
Datasheet MCH6448 DatasheetMCH6444 Datasheet (PDF)

MCH6444 Power MOSFET 35V, 98mΩ, 2.5A, Single N-Channel This Power MOSFET is produced using ON Semiconductor’s trench technology, which is specifically designed to minimize gate charge and low on resistance. This device is suitable for applications with low gate charge driving or low on resistance requirements. Features • Low On-Resistance • 4V drive • ESD Diode-Protected Gate • Pb-Free, Halogen Free and RoHS compliance Typical Applications • Load Switch • Motor Drive SPECIFICATIONS ABSOLUTE .

  MCH6448   MCH6448







Part Number MCH6444
Manufacturers Sanyo Semicon Device
Logo Sanyo Semicon Device
Description N-Channel Silicon MOSFET
Datasheet MCH6448 DatasheetMCH6444 Datasheet (PDF)

www.DataSheet.co.kr Ordering number : EN8935 MCH6444 SANYO Semiconductors DATA SHEET MCH6444 Features • • • N-Channel Silicon MOSFET General-Purpose Switching Device Applications ON-resistance RDS(on)1=75mΩ (typ.) 4V drive Halogen free compliance Specifications Absolute Maximum Ratings at Ta=25°C Parameter Drain-to-Source Voltage Gate-to-Source Voltage Drain Current (DC) Drain Current (Pulse) Allowable Power Dissipation Channel Temperature Storage Temperature Symbol VDSS VGSS ID IDP PD T.

  MCH6448   MCH6448







Power MOSFET

MCH6448 Power MOSFET 20V, 22mΩ, 8A, Single N-Channel www.onsemi.com Features • Low On-Resistance • 1.2V Drive • ESD Diode-Protected Gate • Pb-Free, Halogen Free and RoHS Compliance VDSS 20V RDS(on) Max 22mΩ@ 4.5V 28mΩ@ 2.5V 39mΩ@ 1.8V 124mΩ@ 1.2V ID Max 8A Specifications Absolute Maximum Ratings at Ta = 25°C Parameter Symbol Drain to Source Voltage VDSS Gate to Source Voltage Drain Current (DC) VGSS ID Drain Current (Pulse) PW≤10μs, duty cycle≤1% IDP Power Dissipation When mounted on ceramic substrate (1200mm2 × 0.8mm) PD Junction Temperature Tj Storage Temperature Tstg Thermal Resistance Ratings Parameter Junction to Ambient When mounted on ceramic substrate (1200mm2 × 0.8mm) Symbol RθJA Value 20 ±9 8 32 Unit V V A A 1.5 150 −55 to +150 W °C °C Value Unit 83.3 °C/W Electrical Connection N-Channel 1, 2, 5, 6 1 : Drain 3 2 : Drain 3 : Gate 4 : Source 5 : Drain 4 6 : Drain Packing Type : TL Marking ZX TL LOT No. LOT No. Stresses exceeding those listed in the Maximum Ratings table may damage the device. If any of these limits are exceeded, device functionality should not be assumed, damage may occur and reliability may be affected. ORDERING INFORMATION See detailed ordering and shipping information on page 5 of this data sheet. © Semiconductor Components Industries, LLC, 2015 March 2015 - Rev. 1 1 Publication Order Number : MCH6448/D Electrical Characteristics at Ta = 25°C Parameter Symbol Drain to Source Breakdown Voltage Zero-Gate Volt.


2015-10-30 : MIO1200-25E10    MIO1500-25E10    MIO1200-33E10    MIO1200-33E11    MIO600-65E11    MKI75-06A7    MKI75-06A7T    MKI50-12F7    MKI100-12F8    MKI75-12E8   


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