MFIRF10N65 MCIRF10N65
ID = 10A VDS = 650V RDS(on)MAX = 0.8Ω
Major Ratings and Characteristics
Characteristics
Values...
MFIRF10N65 MCIRF10N65
ID = 10A VDS = 650V RDS(on)MAX = 0.8Ω
Major Ratings and Characteristics
Characteristics
Values
Units
ID 10 A IDM 40 A VDS 650 V
VGS TJ T storage
±30 150 -55 ~150
V
℃ ℃
POWER
MOSFET
Description/ Features The MFIRF10N65 is used an advanced termination scheme to provide enhanced
voltage-blocking capability without degrading performance over time. The new energy efficient design also offers a drainto-source diode with a fast recovery time. Typical applications are in switching power supplies, converters, free-wheeling diodes, and reverse battery protection.
● 150℃ Tj operation ● Low Power Loss & Low cost ●Fast Switching ●RoHS Compliant
Case Styles
Ordering Information Part Number MCIRF10N65 MFIRF10N65
1、 GATE 2、 DRAIN 3、 SOURCE
Package TO-220 TO-220F
1、 GATE 2、 DRAIN 3、 SOURCE
Packaging Tube Tube
1 of 7
MFIRF10N65 MCIRF10N65
Absolute Maximum Rating (Tamb=25℃)
Parameter Drain-Source
Voltage Gate-Source
Voltage Drain Current...
