MCM72F10

MOTOROLA SEMICONDUCTOR TECHNICAL DATA Order this document by MCM72F10/D 8MB Synchronous Fast Static RAM Module The MCM72F10 (2MB) is configured as 1M x 72 bits. It is packaged in a 168–pin dual–in–line memory module DIMM. The module uses Motorola’s 3.3 V, 256K x 18 bit flow–through BurstRAMs. Address (A), data inputs (DQ, DP), and all control signals except output enable (G) are clock (K) controlled through positive–edge–triggered noninverting registers. Write cycles are internally self–timed and initiated by the rising edge of the clock (K) input. This feature provides increased timing flexibility for incoming signals. Synchronous byte write (W) allows writes to either individual bytes or to both bytes. Single 3.3 V + 10%, – 5% Power Supply Plug and Pin Compatibility with 1MB, 2MB, and 4MB Multiple Clock Pins for Reduced Loading All Inputs and Outputs are LVTTL Compatible Byte Write Capability Fast SRAM Access Times: 8/9/12 ns High Quality Multi–Layer FR4 PWB With Separate Power and Ground Planes Amp Connector, Part Number: 390064–4 168–Pin DIMM Module MCM72F10 168–LEAD DIMM CASE TBD TOP VIEW 1 11 40 41 84 REV 1 11/26/97 © Motorola, Inc. 1997 MOTOROLA FAST SRAM MCM72F10 1 BLOCK DIAGRAM 256K x 18 SE1 G A0 – A17 ADSC SBa SBb K DQa0 – DQa7 DQa8 DQb0 – DQb7 DQb8 SE2 ADV ADSP SGW SW LBO SE3 256K x 18 SE1 G A0 – A17 ADSC SBa SBb K DQa0 – DQa7 DQa8 DQb0 – DQb7 DQb8 SE2 ADV ADSP SGW SW LBO SE3 256K x 18 SE1 G A0 – A17 ADSC SBa SBb K DQa0 – DQa7 DQa8 D...