Instrumentation Amplifier. MCP6N16 Datasheet

MCP6N16 Datasheet PDF


Part Number

MCP6N16

Description

Zero-Drift Instrumentation Amplifier

Manufacture

Microchip

Total Page 30 Pages
Datasheet
Download MCP6N16 Datasheet


MCP6N16
MCP6N16
Zero-Drift Instrumentation Amplifier
Features:
• High DC Precision:
- VOS: ±17 µV (maximum, GMIN = 100)
- TC1: ±60 nV/°C (maximum, GMIN = 100)
- CMRR: 112 dB (minimum, GMIN = 100,
VDD = 5.5V)
- PSRR: 110 dB (minimum, GMIN = 100,
VDD = 5.5V)
- gE: ±0.15% (maximum, GMIN = 10, 100)
• Flexible:
- Minimum Gain (GMIN) Options:
1, 10 and 100 V/V
- Rail-to-Rail Input and Output
- Gain Set by Two External Resistors
• Bandwidth: 500 kHz (typical, Gain = GMIN = 1, 10)
• Power Supply:
- VDD: 1.8V to 5.5V
- IQ: 1.1 mA (typical)
- Power Savings (Enable) Pin: EN
• Enhanced EMI Protection:
- Electromagnetic Interference Rejection Ratio
(EMIRR): 111 dB at 2.4 GHz
• Extended Temperature Range: -40°C to +125°C
Typical Applications:
• High-Side Current Sensor
• Wheatstone Bridge Sensors
• Difference Amplifier with Level Shifting
• Power Control Loops
Design Aids:
• SPICE Macro Model
• Microchip Advanced Part Selector (MAPS)
• Application Notes
Description:
Microchip Technology Inc. offers the single Zero-Drift
MCP6N16 instrumentation amplifier (INA) with Enable
pin (EN) and three minimum gain options (GMIN). The
internal offset correction gives high DC precision: it has
very low offset and offset drift, and negligible 1/f noise.
Two external resistors set the gain, minimizing gain
error and drift over temperature. The reference voltage
(VREF) shifts the output voltage (VOUT).
The MCP6N16 is designed for single-supply operation,
with rail-to-rail input (no common mode crossover
distortion) and output performance. The supply voltage
range (1.8V to 5.5V) is low enough to support many
portable applications. All devices are fully specified
from -40°C to +125°C. Each part has EMI filters at the
input pins, for good EMI rejection (EMIRR).
These parts have three minimum gain options (1, 10
and 100 V/V). This allows the user to optimize the input
offset voltage and input noise for different applications.
Typical Application Circuit
VDD RTD Temperature Sensor
2.49 k10 µF
4.99 k
68.1
4.99 k
4.99 k
EN
MCP6N16-100
RTD
100
100
20 k
100
VOUT
Package Types
MCP6N16
MSOP
MCP6N16
3×3 DFN *
EN 1
VIM 2
VIP 3
VSS 4
8 VDD
7 VOUT
6 VFG
5 VREF
EN 1
8 VDD
VIM 2 EP 7 VOUT
VIP 3 9 6 VFG
VSS 4
5 VREF
* Includes Exposed Thermal Pad (EP); see Table 3-1.
2014 Microchip Technology Inc.
DS20005318A-page 1

MCP6N16
MCP6N16
Minimum Gain Options
Table 1 shows key specifications that differentiate
between the different minimum gain (GMIN) options.
See Section 1.0 “Electrical Characteristics”,
Section 6.0 “Packaging Information” and Product
Identification System for further information on GMIN.
TABLE 1: KEY DIFFERENTIATING SPECIFICATIONS
Part No.
GMIN
(V/V)
Nom.
VOS
μV)
Max.
TC1
(±nV/°C)
Max.
TA = -40 to +125°C
CMRR
(dB)
Min.
VDD = 5.5V
PSRR
(dB)
Min.
VDMH
(V)
Min.
GBWP
(MHz)
Typ.
Eni
(μVP-P)
Typ.
f = 0.1 to 10 Hz
eni
(nV/Hz)
Typ.
f < 500 Hz
MCP6N16-001 1 85
1800
89 91 2.7 0.50
19
900
MCP6N16-010 10 22
180
103 104 0.27 5.0
2.2
105
MCP6N16-100 100 17
60
112 110 0.027 35
0.93
45
Note 1: GMIN is the minimum stable gain (GDM), for a given part option. In other words, GDM GMIN.
Figures 1 to 3 show input offset voltage versus
temperature for the three gain options (GMIN = 1, 10,
100 V/V).
4
3
40
30
20
10
0
-10
-20
-30
-40
-50
GMIN = 1
28 Samples
VDD = 5.5V
VCM = VDD/2
NPBW = 3 mHz
-25 0 25 50 75 100 125
Ambient Temperature (°C)
FIGURE 1:
Input Offset Voltage vs.
Temperature, with GMIN = 1.
2
1
0
-1
-2
-3
-4
-50
GMIN = 100
28 Samples
VDD = 5.5V
VCM = VDD/2
NPBW = 3 mHz
-25 0 25 50 75 100 125
Ambient Temperature (°C)
FIGURE 3:
Input Offset Voltage vs.
Temperature, with GMIN = 100.
4
3
2
1
0
-1
-2
-3
-4
-50
GMIN = 10
28 Samples
VDD = 5.5V
VCM = VDD/2
NPBW = 3 mHz
-25 0 25 50 75 100 125
Ambient Temperature (°C)
FIGURE 2:
Input Offset Voltage vs.
Temperature, with GMIN = 10.
DS20005318A-page 2
2014 Microchip Technology Inc.


Features MCP6N16 Zero-Drift Instrumentation Ampl ifier Features: • High DC Precision: - VOS: ±17 µV (maximum, GMIN = 100) - TC1: ±60 nV/°C (maximum, GMIN = 100 ) - CMRR: 112 dB (minimum, GMIN = 100, VDD = 5.5V) - PSRR: 110 dB (minimum, GM IN = 100, VDD = 5.5V) - gE: ±0.15% (ma ximum, GMIN = 10, 100) • Flexible: - Minimum Gain (GMIN) Options: 1, 10 and 100 V/V - Rail-to-Rail Input and Output - Gain Set by Two External Resistors Bandwidth: 500 kHz (typical, Gain = GMIN = 1, 10) • Power Supply: - VDD: 1.8V to 5.5V - IQ: 1.1 mA (typical) - P ower Savings (Enable) Pin: EN • Enhan ced EMI Protection: - Electromagnetic I nterference Rejection Ratio (EMIRR): 11 1 dB at 2.4 GHz • Extended Temperatur e Range: -40°C to +125°C Typical Appl ications: • High-Side Current Sensor • Wheatstone Bridge Sensors • Diffe rence Amplifier with Level Shifting • Power Control Loops Design Aids: • S PICE Macro Model • Microchip Advanced Part Selector (MAPS) • Application Notes Description: Microchip Technology Inc. offers the s.
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