MCP87018
High-Speed N-Channel Power MOSFET
Features:
• Low Drain-to-Source On Resistance (RDS(ON)) • Low Total Gate Cha...
MCP87018
High-Speed N-Channel Power
MOSFET
Features:
Low Drain-to-Source On Resistance (RDS(ON)) Low Total Gate Charge (QG) and Gate-to-Drain
Charge (QGD) Low Series Gate Resistance (RG) Fast Switching Capable of Short Dead-Time Operation RoHS Compliant
Applications:
Point-of-Load DC-DC Converters High-Efficiency Power Management in Servers,
Networking and Automotive Applications
Package Type
PDFN 5 x 6
Description:
The MCP87018 is an N-Channel power
MOSFET in a popular PDFN 5 mm x 6 mm package. Advanced packaging and silicon processing technologies allow the MCP87018 to achieve a low QG for a given RDS(on) value, resulting in a low Figure of Merit (FOM). Combined with low RG, the low FOM of the MCP87018 allows high-efficiency power conversion with reduced switching and conduction losses.
S1 S2 S3 G4
8D 7D 6D 5D
Product Summary Table: Unless otherwise indicated, TA = +25°C.
Parameters
Sym. Min. Typ. Max. Units
Conditions
Operating Characteristics Drain-to-Source Breakdown
Voltage Gate-to-Source Threshold
Voltage Drain-to-Source On Resistance
Total Gate Charge Gate-to-Drain Charge Series Gate Resistance
BVDSS 25 — —
VGS(TH) 1 1.3 1.6
RDS(ON)
— —
1.8 2.2 1.5 1.9
QG — 32.5 37
QGD
— 13 —
RG — 1.5 —
V VGS = 0V, ID = 250 µA V VDS = VGS, ID = 250 µA mΩ VGS = 4.5V, ID = 25A mΩ VGS = 10V, ID = 25A nC VDS = 12.5V, ID = 25A, VGS = 4.5V nC VDS = 12.5V, ID = 25A Ω—
Thermal Characteristics
Thermal Resistance Junction-to-X
RθJX
— — 55 °C/W Note 1
T...