MCR08B, MCR08M
Sensitive Gate Silicon Controlled Rectifiers
Reverse Blocking Thyristors
PNPN devices designed for line ...
MCR08B, MCR08M
Sensitive Gate Silicon Controlled Rectifiers
Reverse Blocking Thyristors
PNPN devices designed for line powered consumer applications such as relay and lamp drivers, small motor controls, gate drivers for larger thyristors, and sensing and detection circuits. Supplied in surface mount package for use in automated manufacturing.
Features
Sensitive Gate Trigger Current Blocking
Voltage to 600 V Glass Passivated Surface for Reliability and Uniformity Surface Mount Package These Devices are Pb−Free and are RoHS Compliant
MAXIMUM RATINGS (TJ = 25°C unless otherwise noted)
Rating
Symbol Value
Unit
Peak Repetitive Off−State
Voltage (Note 1)
(Sine Wave, RGK = 1 kW TJ = 25 to 110°C)
MCR08B
MCR08M
VDRM, VRRM
200 600
V
On-State Current RMS (All Conduction Angles; TC = 80°C)
IT(RMS)
0.8
A
Peak Non-repetitive Surge Current
ITSM 8.0 A
(1/2 Cycle Sine Wave, 60 Hz, TC = 25°C)
Circuit Fusing Considerations (t = 8.3 ms)
I2t
0.4 A2s
Forward Peak Gate Power (TC = 80°C, t = 1.0 ms) Average Gate Power (TC = 80°C, t = 8.3 ms) Operating Junction Temperature Range Storage Temperature Range THERMAL CHARACTERISTICS
Rating
PGM
0.1 W
PG(AV)
0.01
W
TJ −40 to +110 °C Tstg −40 to +150 °C
Symbol
Value
Unit
Thermal Resistance, Junction−to−Ambient PCB Mounted per Figure 1
RqJA
156 °C/W
Thermal Resistance, Junction−to−Tab Measured on Anode Tab Adjacent to Epoxy
RqJT
25 °C/W
Maximum Device Temperature for Soldering Purposes (for 10 Seconds Maximum)
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