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MCR100-3

Taiwan Semiconductor

Small Signal Diode

MCR100-3/MCR100-4/MCR100-5/MCR100-6/MCR100-7/MCR100-8 Thyristors Small Signal Diode DO-92 A B G E F Features Epitax...


Taiwan Semiconductor

MCR100-3

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Description
MCR100-3/MCR100-4/MCR100-5/MCR100-6/MCR100-7/MCR100-8 Thyristors Small Signal Diode DO-92 A B G E F Features Epitaxial planar die construction Surface device type mounting Moisture sensitivity level 1 Matte Tin(Sn) lead finish with Nickel(Ni) underplate Pb free version and RoHS compliant Green compound (Halogen free) with C suffix "G" on packing code and prefix "G" on date code Mechanical Data : TO-92 plastic package Terminal: Matte tin plated, lead free., solderable per MIL-STD-202, Method 208 guaranteed Weight : 0.19gram (approximately) High temperature soldering guaranteed: 260 °C/10s Case D Ordering Information Package TO-92 TO-92 TO-92 TO-92 TO-92 TO-92 Part No. MCR100-3 A1/A1G MCR100-4 A1/A1G MCR100-5 A1/A1G MCR100-6 A1/A1G MCR100-7 A1/A1G MCR100-8 A1/A1G Packing 4k/ box 4k/ box 4k/ box 4k/ box 4k/ box 4k/ box Dimensions A B C D E F G Unit (mm) Min 4.50 4.50 12.50 0.35 3.50 1.00 0.29 Max Unit (inch) Min Max 0.185 0.185 0.017 0.145 0.047 0.015 4.70 0.177 4.70 0.177 0.45 3.70 1.20 0.39 0.492 0.013 0.137 0.039 0.011 Rating at 25°C ambient temperature unless otherwise specified. Maximum Ratings and Electrical Characteristics Maximum Ratings Type Number Forward Current RMS(All Conduction Angles) Peak Repetitive Forward and Reverse Blocking Voltage(TJ=25℃ TO 125℃, RGK=1KΩ) Peak Forward Surge Current,TA=25℃ (1/2 Cycle,Sine Wave,60Hz) Circuit Fusing Considerations(t= 8.3 ms) Forward Peak Gate Power (TA=25℃,PW≤1 us) Forward Average Gate Power(TA=25℃) F...




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