MCR106

MCR106-6, MCR106-8 Preferred Device Sensitive Gate Silicon Controlled Rectifiers Reverse Blocking Thyristors PNPN devices designed for high volume consumer applications such as temperature, light and speed control; process and remote control, and warning systems where reliability of operation is important. Glass-Passivated Surface for Reliability and Uniformity Power Rated at Economical Prices Practical Level Triggering and Holding Characteristics Flat, Rugged, Thermopad Construction for Low Thermal Resistance, High Heat Dissipation and Durability Device Marking: Device Type, e.g., MCR106–6, Date Code MAXIMUM RATINGS (TJ = 25°C unless otherwise noted) Rating Peak Repetitive Off–State Voltage(1) (TJ = –40 to 110°C, Sine Wave 50 to 60 Hz, Gate Open) MCR106–6 MCR106–8 On-State RMS Current (TC = 93°C) (180° Conduction Angles) Average On–State Current (180° Conduction Angles; TC = 93°C) Peak Non-repetitive Surge Current (1/2 Cycle, Sine Wave 60 Hz, TJ = 110°C) Circuit Fusing Considerations (t = 8.3 ms) Forward Peak Gate Power (TC = 93°C, Pulse Width Symbol VDRM, VRRM 400 600 IT(RMS) IT(AV) ITSM 4.0 2.55 25 Amps Amps Amps 3 Value Unit Volts A http://onsemi.com SCRs 4 AMPERES RMS 400 thru 600 VOLTS G K 2 1 I2t PGM PG(AV) IGM VRGM TJ Tstg — 2.6 0.5 0.1 0.2 6.0 –40 to +110 –40 to +150 6.0 A2s Watt Watt 1 Amp Volts °C °C in. lb. 2 3 v 1.0 µs) v 1.0 µs) v 1.0 µs) TO–225AA (formerly TO–126) CASE 077 STYLE 2 Forward Average Gate Power (TC = 93°C, t = 8.3 ms) Forward P...