I
MCR1906=I
o thru MCR1906=6 I
I
I
REVERSE BLOCKING TRIODE THYRISTORS
These devices are glassivated planar constructio...
I
MCR1906=I
o thru MCR1906=6 I
I
I
REVERSE BLOCKING TRIODE THYRISTORS
These devices are glassivated planar construction designed for applications in control systems and sensing circuits where low-level gating and holding characteristics are necessary.
. Low-Level Gate Characteristics — IGT= 1.0 mA (Max) @Tc” = 25°C
@ Low Holding Current – IH = 5.0 mA (Max) @ Tc = 25°C
~.:. ~T”* ,,,{,~:’, \ . ,..)X>..,$, ”, ,.:s* ~‘,.,$. ,,,>,, ***
o
MAXIMUM RATINGS (T I = 100°C un[ess othe
v~~~
IT(RMS)
Value
25 50 100 200 300 400 500 600 1,6
o
‘eak Non-R~eti$ve Surge Current
(on$$~~?~b
Hz, TJ = -40to+110°C)
P‘~+~.\1e.,%.’\,,ak~n,d raW@urrent
followed by and
voltage
‘*. ‘eak Gate Power
Average Gate Power
‘eak Gate Current
~eak Gate
Voltage
~perating Junction Temperature Range
jtorage Temperature Range
-cad Solder Temperature (>1/16” From Case, 10 s max.)
ITSM
15
PGM PGF(AVj
IGM VGM
TJ
Tstg —
0.1 0.01
0.1
6.0 –65to+l10 -65to +150
+230
Unit volt...