Semiconductor
April 1999
PRO
CE
IGNS WN DRA EW DES H T I TW ON PAR ETE - N L BSO SS O
MCTV75P60E1, MCTA75P60E1
JEDE...
Semiconductor
April 1999
PRO
CE
IGNS WN DRA EW DES H T I TW ON PAR ETE - N L BSO SS O
MCTV75P60E1, MCTA75P60E1
JEDEC STYLE TO-247 5-LEAD
ANODE ANODE CATHODE GATE RETURN GATE
75A, 600V P-Type MOS Controlled Thyristor (MCT)
Package
Features
75A, -600V VTM = -1.3V(Maximum) at I = 75A and +150oC 2000A Surge Current Capability 2000A/µs di/dt Capability MOS Insulated Gate Control 120A Gate Turn-Off Capability at +150oC
Description
The MCT is an MOS Controlled Thyristor designed for switching currents on and off by negative and positive pulsed control of an insulated MOS gate. It is designed for use in motor controls, inverters, line switches and other power switching applications. The MCT is especially suited for resonant (zero
voltage or zero current switching) applications. The SCR like forward drop greatly reduces conduction power loss. MCTs allow the control of high power circuits with very small amounts of input energy. They feature the high peak current capability common to SCR type thyristors, and operate at junction temperatures up to +150oC with active switching.
PART NUMBER INFORMATION PART NUMBER MCTV75P60E1 MCTA75P60E1 PACKAGE TO-247 MO-093AA BRAND MV75P60E1 MA75P60E1
JEDEC MO-093AA (5-LEAD TO-218)
ANODE ANODE CATHODE GATE RETURN GATE
Symbol
G A
K
NOTE: When ordering, use the entire part number.
Absolute Maximum Ratings
TC = +25oC, Unless Otherwise Specified MCTV75P60E1 MCTA75P60E1 UNITS V V A A A A V V A/µs W W/oC oC oC
Peak Off-State
Voltage ...