MD1802FX

isc Silicon NPN Power Transistor MD1802FX DESCRIPTION · High Voltage · Low base-drive requirements · Collector-Emitter Sustaining Voltage- : VCEO(SUS)= 700V (Min) ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·Horizontal deflection output for TV ·Switch mode power supplies for CRT TV ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage 1500 V VCEO Collector-Emitter Voltage 700 V VEBO Emitter-Base Voltage 9 V IC Collector Current- Continuous 10 A ICM Collector peak current (tp<5ms) 15 A IB Base Current- Continuous 5 A PTOT Total dissipation at TC=25℃ 57 W TJ Junction Temperature 150 ℃ Tstg Storage Temperature Range -65~150 ℃ THERMAL CHARACTERISTICS SYMBOL PARAMETER Rth j-c Thermal Resistance,Junction to Case MAX 2.2 UNIT ℃/W isc website：www.iscsemi.com 1 isc & iscsemi is registered trademark isc Silicon NPN Power Transistor ELECTRICAL CHARACTERISTICS TC=25℃ unless otherwise specified SYMBOL PARAMETER CONDITIONS VCEO(sus) Collector-emitter sustaining Voltage IC= 10mA; IC= 0 VCE(sat) Collector-Emitter Saturation Voltage IC= 5.0A; IB=1.25A VBE(sat) Base-Emitter Saturation Voltage IC= 5.0A; IB=1.25A ICBO Collector Cutoff Current VCB= 1500V ; IE= 0 IEBO Emitter Cutoff Current VEB= 9V ; IC= 0 hFE-1 DC Current Gain IC= 1A ; VCE= 5V hFE-2 DC Current Gain IC= 5A ; VCE= 1V hFE-3 DC Current Gain IC= 5A ; VCE= 5V MD1802FX MIN ...