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MD1803DFX Datasheet

Part Number MD1803DFX
Manufacturers ST Microelectronics
Logo ST Microelectronics
Description High voltage NPN Power transistor
Datasheet MD1803DFX DatasheetMD1803DFX Datasheet (PDF)

MD1803DFX High voltage NPN Power transistor for standard definition CRT display Features ■ State-of-the-art technology: – Diffused collector “enhanced generation” ■ More stable performance versus operating temperature variation ■ Low base drive requirement ■ Tighter hFE range at operating collector current ■ Fully insulated power package U.L. compliant ■ Integrated free wheeling diode ■ In compliance with the 2002/93/EC european directive Applications ■ Horizontal deflection output for TV Descr.

  MD1803DFX   MD1803DFX






Part Number MD1803DFX
Manufacturers Inchange Semiconductor
Logo Inchange Semiconductor
Description Silicon NPN Power Transistor
Datasheet MD1803DFX DatasheetMD1803DFX Datasheet (PDF)

isc Silicon NPN Power Transistor DESCRIPTION · High Voltage · Low base-drive requirements · Collector-Emitter Sustaining Voltage- : VCEO(SUS)= 700V (Min) ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·Horizontal deflection output for TV ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage 1500 V VCEO Collector-Emitter Voltage 700 V VEBO Emitter-Base Voltage 10 V IC Collector Current- Contin.

  MD1803DFX   MD1803DFX







High voltage NPN Power transistor

MD1803DFX High voltage NPN Power transistor for standard definition CRT display Features ■ State-of-the-art technology: – Diffused collector “enhanced generation” ■ More stable performance versus operating temperature variation ■ Low base drive requirement ■ Tighter hFE range at operating collector current ■ Fully insulated power package U.L. compliant ■ Integrated free wheeling diode ■ In compliance with the 2002/93/EC european directive Applications ■ Horizontal deflection output for TV Description The MD1803DFX is manufactured using Diffused Collector in Planar Technology adopting new and enhanced high voltage structure. The new MD product series show improved silicon efficiency bringing updated performance to the Horizontal Deflection stage. 3 2 1 ISOWATT218FX Internal schematic diagram RBE=60Ω typ. Order codes Part number MD1803DFX Marking MD1803DFX Package ISOWATT218FX Packing TUBE September 2006 Rev 6 1/10 www.st.com 10 Electrical ratings 1 Electrical ratings Table 1. Absolute maximum rating Symbol Parameter VCES VCEO VEBO IC ICM IB PTOT Visol Tstg TJ Collector-emitter voltage (VBE = 0) Collector-emitter voltage (IB = 0) Emitter-base voltage (IC = 0) Collector current Collector peak current (tP < 5ms) Base current Total dissipation at Tc = 25°C Insulation withstand voltage (rms) from all three leads to external heatsink Storage temperature Max. operating junction temperature Table 2. Thermal data Symbol Parameter Rthj-case Thermal resistance junctio.


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