MD2369BF

MAXIMUM RATINGS Rating Collector-Emitter Voltage Collector-Base Voltage Emitter-Base Voltage —Collector Current Continuous Total Device Dissipation @ Ta = 25°C MD2369AB MD2369F,AF,BF MQ2369 Derate above 25°C MD2369AB MD2369F,AF,BF MQ2369 Total Device Dissipation @ TC = 25°C MD2369,A,B MD2369F,AF,BF MQ2369 Derate above 25°C MD2369AB MD2369F,AF,BF MQ2369 Operating and Storage Junction Temperature Range Symbol vCEO VCBO v EBO 'C PD Value Unit 15 Vdc 40 Vdc 5.0 Vdc 500 mAdc One Die All Die Equal Power mW 550 350 400 3.14 2.0 2.28 Pd 600 400 600 3.42 2.28 3.42 mW/°C Watts TJ. Tstg 1:4 0.7 0.7 2.0 .1.4, 2.8 8.0 4.0 4.0 11.4 80 16 - 65 to + 200 mW/°C °C MD2369,A,B MD2369F,AF,BF MQ2369 MD2369,A,B CASE 654-07, STYLE 1 MD2369F,AF,BF CASE 610A-04, STYLE 1 MQ2369 CASE 607-04, STYLE 1 DUAL GENERAL PURPOSE TRANSISTOR NPN SILICON THERMAL CHARACTERISTICS Characteristic Thermal Resistance, Junction to Case Thermal Resistance Junction to Ambient MD2369AB MD2369F,AF,BF M...