MD3DFN3

MD3DFN3 3A Full Bridge Rectifier GENERAL DESCRIPTION Dual 20 V N−Channel with 3.5 A Schottky Barrier Diode, 4.0 x 4.0 x 0.5 mm DFN Package FEATURES Full−Bridge Rectifier Block Up to 3.2 A operation Low RDS(on) MOSFET to minimize conduction loss Low gate charge MOSFET Low VF Schottky diode Ultra Low Inductance Package APPLICATIONS Wireless Charging AC−DC Rectification Optimized for Power Management Applications for Portable Products, such as Cell Phones, PMP, DSC, GPS, and others Absolute Maximum Ratings Parameter Drain-Source Voltage Continuous Drain Current @ TC=25°C Continuous Drain Current @ TC=100°C Pulsed Drain Current Gate-Source Voltage Single Pulsed Avalanche Energy Avalanche Current Repetitive Avalanche Energy Peak Diode Recovery dV/dt Power Dissipation (TC=25°C) Power Dissipation (TC=100°C) Operating Junction and Storage Temperature NOTE: 1. Repeativity rating : pulse width limited by junction temperature 2. L = 15mH, IAS =9.0A, VDD = 50V, RG = 25Ω , Starting TJ = 25°C 3. ISD ≤ 9.0A, di/dt ≤ 200A/us, VDD ≤ BVDSS, Starting TJ = 25°C 4. Pulse Test : Pulse Width ≤ 300us, Duty Cycle ≤ 2% 5. Essentially independent of operating temperature. (Tc=25°C unless otherwise noted) Symbol VDS ID ID IDM VGS EAS IAR EAR dV/dt PD Tj, Tstg Value 700 10 6.0 40 ±30 658 10 17.8 4.5 35 0.30 -55~+150 Unit V A A A V mJ A mJ V/ns W W °C ©Bruckewell Technology Corporation Rev. A -2013 http://www.Datasheet4U.com MD3DFN3 3A Full Bridge Rectifier Characteristics (Tc=25°C,...