MDA100A series (3N246 thru 3N252)
® MOTOROLA
MINIATURE INTEGRAL DIODE ASSEMBLIES
· .. with silicon rectifier chips in...
MDA100A series (3N246 thru 3N252)
® MOTOROLA
MINIATURE INTEGRAL DIODE ASSEMBLIES
· .. with silicon rectifier chips interconnected and encapsulated into voidless rectifier bridge circu its.
II
High Resistance to Shock and Vibration High Dielectric Strength Built-In Printed Circuit Board Stand-Offs UL Recognized ROJA ~ 60°C/W
MAXIMUM RATINGS
Rating (Per Diodel
Symbol
Voltage Working Peak Reverse Voltage DC Blocking Voltage
VRRM VRWM
VR
50 100 200 400 600 800 1000 Volts
DC Output Voltage Resistive Load Capadt ive Load
Vdc 32 64 127 255 382 510 640 Volts Vdc 50 100 200 400 600 800 1000 Volts
Sine Wave RMS Input Voltage
VR(RMSi
Average Rectified Forward Current
(single phase bridge operation, resistive load, 60 Hz, TA" 750 Ci
10
35 70 140 280 420 560 700
. .1.0
Volts Amp
Non-Repetitive Peak Surge Current (Preceded and followed by rated current and voltage. T A = 750 Ci
Operating and Storage Junction Temperature Range
IFSM ~ 30 (for 1 cycle) ~ Amp
.TJ.Tstg
-55 to +150 ---...- °c
ELECTRICAL CHARACTERISTICS
Characteristic
Instantaneous Forward Voltage (Per Diode) (iF = 1.57 Amp. T J = 250 Ci
Reverse Current (Per Diode) (Rated VR. TA = 25°C)
Symbol vF
Typ 1.15
IR -
Max 1.3
10
Unit Volts
IlA
MECHANICAL CHARACTERISTICS
CASE: Transfer Mol...
