MDA200 series
(3N253 thru 3N259)
® MOTOROLA
MINIATURE INTEGRAL DIODE ASSEMBLIES
· .. with silicon rectifier chips int...
MDA200 series
(3N253 thru 3N259)
® MOTOROLA
MINIATURE INTEGRAL DIODE ASSEMBLIES
· .. with silicon rectifier chips interconnected and encapsulated into voidless rectifier bridge circuits.
High Resistance to Shock and Vibration High Dielectric Strength Built·ln Printed Circuit Board Stand·Offs
II
UL Recognized ROJA = 60°C/W
MAXIMUM RATINGS
Rating (Per Diode)
Symbol
0 ",0
IDN
ZNce( "':;
;Nzz~=e
"':;
IIDDNON
"Nz'ce:(;
:"~8,~:e~;
.... :!:
IDN
ZNce( "':;
fg~ ZNce( "':;
0
I"D'N~
"zN'c:e;(
Unit
Peak Repetitive Reverse
Voltage Working Peak Reverse
Voltage DC Blocking
Voltage
VRRM VRWM
VR
50 '00 200 400 600 800 1000 Volts
DC Output
Voltage Resistive Load Capacitive Load
Vdc 32 64 '27 255 382 5'0 640 Volts Vdc 50 '00 200 400 600 800 1000 Volts
Sine Wave RMS Input
Voltage
VR(RMSI 35 70 '40 280 420 560 700 Volts
Average Rectified Forward Current
..(single phase bridge operation,
10
resistive load, 60 Hz,
TA" 550 CI
.2.0 Amp
Non-Repetitive Peak Surge Current (Preceded and followed by rated current and
voltage, TA '" 55°C)
Operating and Storage Junction Temperature Range
IFSM ~ 60 (for 1 cycle) _______ Amp
.TJ.T,tg
-55to+'65- °c
ELECTRICAL CHARACTERISTICS
Characteristic
Instantaneous Forward
Voltage (Per Diode)
{iF =3.'4 Amp, TJ =250CI
Reverse Current (Per Diode)
(Rated VR, TA =250 C)
,.,Symbol Typ
Max
Unit
vF '.0
Volts
IR -
"A '0
MECHANICAL CHARACTERISTICS
CASE: Transfer Molded Plastic
POLARITV: Terminal·designation on case
Pin 1 (+) for D...