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MDD1051 MOSFET Datasheet PDF

Single N-channel MOSFET

Single N-channel MOSFET

 

 

 

Part Number MDD1051
Description Single N-channel MOSFET
Feature MDD1051 – Single N-Channel Trench MOSF ET 150V MDD1051 Single N-channel Trenc h MOSFET 150V, 28A, 46mΩ ㄹ General Description The MDD1051 uses advanced M agnaChip’s MOSFET Technology, which p rovides high performance in on-state re sistance, fast switching performance an d excellent quality.
MDD1051 is suitabl e device for Synchronous Rectification For Server and general purpose applicat ions.
Features  VDS = 150V  ID = 28A @VGS = 10V  RDS(ON) (MAX) < 46.
0mΩ @VGS = 10V  100% UIL Tested  100% Rg Tested D Absolute Maximum Ra tings (Ta = 25oC) Characteristics Dra in-Source Voltage Gate-Source V .
Manufacture MagnaChip
Datasheet
Download MDD1051 Datasheet

MDD1051

 

 

 


 

 

 

Part Number MDD1051RH
Description N-Channel MOSFET
Feature Isc N-Channel MOSFET Transistor INCHANG E Semiconductor MDD1051RH ·FEATURES With To-252(DPAK) package ·Low input capacitance and gate charge ·Low gate input resistance ·100% avalanche teste d ·Minimum Lot-to-Lot variations for r obust device performance and reliable o peration ·APPLICATIONS ·Switching app lications ·ABSOLUTE MAXIMUM RATINGS(T a=25℃) SYMBOL PARAMETER VALUE VDS S Drain-Source Voltage 150 VGSS ID I DM PD Tch Gate-Source Voltage Drain Cu rrent-Continuous@TC=25℃ TC=100℃ Dra in Current-Single Pulsed Total Dissipat ion @TC=25℃ TC=100℃ Max.
Operating Junction Temperature ±20 28 18 1 .
Manufacture INCHANGE
Datasheet
Download MDD1051RH Datasheet

MDD1051RH

 

 

 


 

 

 

Part Number MDD1051
Description Single N-channel MOSFET
Feature MDD1051 – Single N-Channel Trench MOSF ET 150V MDD1051 Single N-channel Trenc h MOSFET 150V, 28A, 46mΩ ㄹ General Description The MDD1051 uses advanced M agnaChip’s MOSFET Technology, which p rovides high performance in on-state re sistance, fast switching performance an d excellent quality.
MDD1051 is suitabl e device for Synchronous Rectification For Server and general purpose applicat ions.
Features  VDS = 150V  ID = 28A @VGS = 10V  RDS(ON) (MAX) < 46.
0mΩ @VGS = 10V  100% UIL Tested  100% Rg Tested D Absolute Maximum Ra tings (Ta = 25oC) Characteristics Dra in-Source Voltage Gate-Source V .
Manufacture MagnaChip
Datasheet
Download MDD1051 Datasheet

MDD1051

 

 

 

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