MDD1653 – Single N-Channel Trench MOSFET 30V
MDD1653
30V N-channel Trench MOSFET : 30V, 50A, 8.5mΩ
General Description...
MDD1653 – Single N-Channel Trench
MOSFET 30V
MDD1653
30V N-channel Trench
MOSFET : 30V, 50A, 8.5mΩ
General Description The MDD1653 uses advanced Magnachip’s
MOSFET Technology, which provides high performance in on-state resistance, fast switching performance and excellent quality. MDD1653 is suitable device for PWM, Load Switching and general purpose applications.
Features VDS = 30V ID = 50A @VGS = 10V RDS(ON) < 8.5mΩ @VGS = 10V < 14.0mΩ @VGS = 4.5V
Absoloute Maximun Ratings (Ta = 25 C)
Characteristics Drain-Source
Voltage Gate-Source
Voltage Continuous Drain Current Pulsed Drain Current Power Dissipation Power Dissipation Single Pulse Avalanche Energy
(2) (1)
o
Symbol VDSS VGSS TC=25 C TC=100 C TC=25 C TC=100 C TA=25 C TA=70 C
o o o o o o
Rating 30 ±20 50 50 150 50 25 3 2.1 100 -55~150
Unit V V A A A W W mJ
o
ID IDM PD PDSM EAS TJ, Tstg
Junction and Storage Temperature Range
C
Thermal Characteristics
Characteristics Thermal Resistance, Junction-to-Ambient Thermal Resistance, Junction-to-Case
August. 2008. Version 2.0 1
(1)
Symbol RθJA RθJC
Rating 45 2.5
Unit
o
C/W
MagnaChip Semiconductor Ltd.
Free Datasheet http://www.datasheet4u.com/
MDD1653 – Single N-Channel Trench
MOSFET 30V
Ordering Information
Part Number MDD1653T MDD1653R Temp. Range -55~150 C o -55~150 C
o
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Package D-PAK D-PAK
Packing Tube Tape & Reel
RoHS Status Halogen Free Halogen Free
Electrical Characteristics (Ta =25 C)
Characteristics Static Characteristics Drain-Source Breakdown Volta...