MDD1901 – Single N-Channel Trench MOSFET 100V
MDD1901
Single N-channel Trench MOSFET 100V, 40A, 22mΩ
General Descripti...
MDD1901 – Single N-Channel Trench
MOSFET 100V
MDD1901
Single N-channel Trench
MOSFET 100V, 40A, 22mΩ
General Description
The MDD1901 uses advanced MagnaChip’s
MOSFET Technology, which provides high performance in on-state resistance, fast switching performance and excellent quality. MDD1901 is suitable device for DC/DC Converters and general purpose applications.
Features
VDS = 100V ID = 40A @VGS = 10V RDS(ON)
< 22mΩ @VGS = 10V < 25mΩ @VGS = 6.0V
D
Absolute Maximum Ratings (Tc = 25oC)
Drain-Source
Voltage Gate-Source
Voltage
Continuous Drain Current (1)
Characteristics
Pulsed Drain Current
Power Dissipation
Single Pulse Avalanche Energy (2) Junction and Storage Temperature Range
Thermal Characteristics
Characteristics Thermal Resistance, Junction-to-Ambient Thermal Resistance, Junction-to-Case (1)
G S
TC=25oC TC=100oC
TC=25oC TC=100oC
Symbol VDSS VGSS
ID IDM
PD
EAS TJ, Tstg
Rating 100 ±20 40 24 80 70 28 200
-55~150
Unit V V A A A
W
mJ oC
Symbol RθJA...