Rectifier Module. MDD2614N1B Datasheet 

Part Number  MDD2614N1B 
Description  Standard Rectifier Module 
Manufacture  IXYS 
Total Page  6 Pages 
Datasheet 

Standard Rectifier Module
Phase leg
Part number
MDD2614N1B
2 13
MDD2614N1B
VRRM
I FAV
VF
= 2x 1400 V
= 36 A
= 1.05 V
Backside: isolated
Features / Advantages:
● Package with DCB ceramic
● Improved temperature and power cycling
● Planar passivated chips
● Very low forward voltage drop
● Very low leakage current
Applications:
● Diode for main rectification
● For single and three phase
bridge configurations
● Supplies for DC power equipment
● Input rectifiers for PWM inverter
● Battery DC power supplies
● Field supply for DC motors
Package: TO240AA
● Isolation Voltage: 3600 V~
● Industry standard outline
● RoHS compliant
● Height: 30 mm
● Base plate: DCB ceramic
● Reduced weight
● Advanced power cycling
Disclaimer Notice
Information furnished is believed to be accurate and reliable. However, users should independently
evaluate the suitability of and test each product selected for their own applications. Littelfuse products are not designed for,
and may not be used in, all applications. Read complete Disclaimer Notice at www.littelfuse.com/disclaimerelectronics.
IXYS reserves the right to change limits, conditions and dimensions.
© 2019 IXYS all rights reserved
Data according to IEC 60747and per semiconductor unless otherwise specified
20191202c

Rectifier
Symbol
VRSM
VRRM
IR
VF
I FAV
I F(RMS)
VF0
rF
R thJC
R thCH
Ptot
I FSM
Definition
Conditions
max. nonrepetitive reverse blocking voltage
max. repetitive reverse blocking voltage
reverse current
VR = 1400 V
VR = 1400 V
forward voltage drop
IF = 40 A
IF = 80 A
IF = 40 A
IF = 80 A
average forward current
TC = 100°C
RMS forward current
180° sine
threshold voltage
slope resistance
for power loss calculation only
thermal resistance junction to case
thermal resistance case to heatsink
total power dissipation
max. forward surge current
t = 10 ms; (50 Hz), sine
t = 8,3 ms; (60 Hz), sine
t = 10 ms; (50 Hz), sine
t = 8,3 ms; (60 Hz), sine
I²t value for fusing
t = 10 ms; (50 Hz), sine
t = 8,3 ms; (60 Hz), sine
t = 10 ms; (50 Hz), sine
t = 8,3 ms; (60 Hz), sine
CJ junction capacitance
VR = 400 V; f = 1 MHz
MDD2614N1B
TVJ = 25°C
TVJ = 25°C
TVJ = 25°C
TVJ = 150°C
TVJ = 25°C
TVJ = 125 °C
TVJ = 150°C
TVJ = 150°C
TC = 25°C
TVJ = 45°C
VR = 0 V
TVJ = 150°C
VR = 0 V
TVJ = 45°C
VR = 0 V
TVJ = 150°C
VR = 0 V
TVJ = 25°C
Ratings
min. typ. max. Unit
1500 V
1400 V
100 µA
1.5 mA
1.13 V
1.38 V
1.05 V
1.27 V
36 A
60 A
0.80 V
6.1 mΩ
1 K/W
0.2 K/W
125 W
650 A
700 A
555 A
595 A
2.12 kA²s
2.04 kA²s
1.54 kA²s
1.48 kA²s
27 pF
IXYS reserves the right to change limits, conditions and dimensions.
© 2019 IXYS all rights reserved
Data according to IEC 60747and per semiconductor unless otherwise specified
20191202c

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