MDD3752 – P-Channel Trench MOSFET
MDD3752
P-Channel Trench MOSFET, -40V, -43A, 17mΩ
General Description
The MDD3752 use...
MDD3752 – P-Channel Trench
MOSFET
MDD3752
P-Channel Trench
MOSFET, -40V, -43A, 17mΩ
General Description
The MDD3752 uses advanced MagnaChip’s Trench
MOSFET Technology to provided high performance in onstate resistance, switching performance and reliability. Low RDS(ON), Low Gate Charge can be offering superior benefit in the application.
Features
VDS = -40V ID = -43A @VGS = -10V RDS(ON) < 17mΩ @ VGS = -10V < 25mΩ @ VGS = -4.5V
Applications
Inverters General purpose applications
D
G
S
Absolute Maximum Ratings (TC =25o)
Characteristics Drain-Source
Voltage Gate-Source
Voltage Continuous Drain Current Pulsed Drain Current Power Dissipation Single Pulse Avalanche Energy Junction and Storage Temperature Range TC=25 C TC=100 C (Note 3)
o o
Symbol VDSS VGSS
Rating -40 ±20 43
Unit V V A A A W
(Note 2)
TC=25 C TC=100 C
o
o
ID IDM PD EAS TJ, Tstg
27 -90 50 20 128 -55~+150
mJ
o
C
Thermal Characteristics
Characteristics Thermal Resistance, Junction-to-Ambient Thermal Resistance, Junction-to-Case (Note 1) Symbol RθJA RθJC Rating 40 2.5 Unit
o
C/W
November 2008. Version 1.0
1
MagnaChip Semiconductor Ltd.
MDD3752 – P-Channel Trench
MOSFET
Ordering Information
Part Number MDD3752RH Temp. Range -55~150oC Package D-PAK Packing Tape & Reel RoHS Status Halogen Free
Electrical Characteristics (TJ =25oC unless otherwise noted)
Characteristics Static Characteristics Drain-Source Breakdown
Voltage Gate Threshold
Voltage Zero Gate
Voltage Drain Current Gate Leakage ...