MDD4N60

MDD4N60B / MDI4N60B N-channel MOSFET 600V MDD4N60 / MDI4N60B N-Channel MOSFET 600V, 3.5A, 2.0Ω General Description The MDD/I4N60B uses advanced Magnachip’s MOSFET Technology, which provides low on-state resistance, high switching performance and excellent quality. MDD/I4N60B is suitable device for SMPS, HID and general purpose applications. . Features VDS = 600V ID = 3.5A RDS(ON) ≤ 2.0Ω @ VGS = 10V @ VGS = 10V Applications Power Supply PFC High Current, High Speed Switching D GDS I-PAK (TO-251) G Absolute Maximum Ratings (Ta = 25oC) Characteristics Drain-Source Voltage Gate-Source Voltage Continuous Drain Current Pulsed Drain Current(1) Power Dissipation Repetitive Avalanche Energy(1) Peak Diode Recovery dv/dt(3) Single Pulse Avalanche Energy(4) Junction and Storage Temperature Range * Id limited by maximum junction temperature TC=25oC TC=100oC TC=25oC Derate above 25 oC Symbol VDSS VGSS ID IDM PD EAR dv/dt EAS TJ, Tstg S Rating 600 ±30 3.5 2.2 14 67.5 0.54 6.75 4...