MDD5N50Z

MDD5N50 N-channel MOSFET 500V MDD5N50Z N-Channel MOSFET 500V, 4.4 A, 1.4Ω General Description The MDD5N50Z uses advanced Magnachip’s MOSFET Technology, which provides low on-state resistance, high switching performance and excellent quality. MDD5N50Z is suitable device for SMPS, HID and general purpose applications. Features VDS = 500V VDS = 550V ID = 4.4A RDS(ON) ≤ 1.4Ω @ Tjmax @VGS = 10V @VGS = 10V Applications Power Supply PFC Ballast TO-252 (DPAK) D G S Absolute Maximum Ratings (Ta = 25oC) Characteristics Drain-Source Voltage Drain-Source Voltage @ Tjmax Gate-Source Voltage Continuous Drain Current Pulsed Drain Current(1) Power Dissipation Peak Diode Recovery dv/dt(3) Single Pulse Avalanche Energy(4) Junction and Storage Temperature Range Thermal Characteristics Characteristics Thermal Resistance, Junction-to-Ambient(1) Thermal Resistance, Junction-to-Case(1) TC=25oC TC=100oC TC=25oC Derate above 25 oC Symbol VDSS VDSS @ Tjmax VGSS ID IDM PD Dv/dt EAS TJ, Tstg Rat...