DatasheetsPDF.com

MDD95-08N1B Datasheet

Part Number MDD95-08N1B
Manufacturers IXYS
Logo IXYS
Description Standard Rectifier
Datasheet MDD95-08N1B DatasheetMDD95-08N1B Datasheet (PDF)

Standard Rectifier Module Phase leg Part number MDD95-08N1B 2 13 MDD95-08N1B VRRM I FAV VF = 2x 800 V = 120 A = 1.13 V Backside: isolated Features / Advantages: ● Package with DCB ceramic ● Improved temperature and power cycling ● Planar passivated chips ● Very low forward voltage drop ● Very low leakage current Applications: ● Diode for main rectification ● For single and three phase bridge configurations ● Supplies for DC power equipment ● Input rectifiers for PWM inverter ● Battery DC p.

  MDD95-08N1B   MDD95-08N1B






Standard Rectifier

Standard Rectifier Module Phase leg Part number MDD95-08N1B 2 13 MDD95-08N1B VRRM I FAV VF = 2x 800 V = 120 A = 1.13 V Backside: isolated Features / Advantages: ● Package with DCB ceramic ● Improved temperature and power cycling ● Planar passivated chips ● Very low forward voltage drop ● Very low leakage current Applications: ● Diode for main rectification ● For single and three phase bridge configurations ● Supplies for DC power equipment ● Input rectifiers for PWM inverter ● Battery DC power supplies ● Field supply for DC motors Package: TO-240AA ● Isolation Voltage: 3600 V~ ● Industry standard outline ● RoHS compliant ● Height: 30 mm ● Base plate: DCB ceramic ● Reduced weight ● Advanced power cycling Disclaimer Notice Information furnished is believed to be accurate and reliable. However, users should independently evaluate the suitability of and test each product selected for their own applications. Littelfuse products are not designed for, and may not be used in, all applications. Read complete Disclaimer Notice at www.littelfuse.com/disclaimer-electronics. IXYS reserves the right to change limits, conditions and dimensions. © 2019 IXYS all rights reserved Data according to IEC 60747and per semiconductor unless otherwise specified 20191202c Rectifier Symbol VRSM VRRM IR VF I FAV I F(RMS) VF0 rF R thJC R thCH Ptot I FSM Definition Conditions max. non-repetitive reverse blocking voltage max. repetitive reverse blocking voltage reverse current VR = 800 V .


2020-02-03 : MPSA55    TF602LG    SD101CW    SD101BW    TVT6V2AW    1N758A    1N759A    1N753A    1N754A    1N750A   


@ 2014 :: Datasheetspdf.com ::
Semiconductors datasheet search & download site (Privacy Policy & Contact)