MDF10N65B

MDF10N65B N-channel MOSFET 650V MDF10N65B N-Channel MOSFET 650V, 10.0A, 1.0Ω General Description The MDF10N65B MOSFET are produced using advanced MagnaChip’s MOSFET Technology, which provides low onstate resistance, high switching performance and excellent quality. MDF10N65B is suitable device for SMPS, high Speed switching and general purpose applications. Features  VDS = 650V  ID = 10.0A  RDS(ON) ≤ 1.0Ω @ VGS = 10V @ VGS = 10V Applications  Power Supply  PFC  High Current, High Speed Switching D TO-220F MDF Series Absolute Maximum Ratings (Ta = 25oC) Drain-Source Voltage Gate-Source Voltage Characteristics Continuous Drain Current Pulsed Drain Current(1) Power Dissipation Repetitive Avalanche Energy(1) Peak Diode Recovery dv/dt(3) Single Pulse Avalanche Energy(4) Junction and Storage Temperature Range * Id limited by maximum junction temperature TC=25oC TC=100oC TC=25oC Derate above 25 oC Thermal Characteristics Characteristics Thermal Resistance, Junction-to-Ambient(1) Thermal Resistance, Junction-to-Case(1) G S Symbol VDSS VGSS ID IDM PD EAR dv/dt EAS TJ, Tstg Rating 650 ±30 10.0* 5.0* 40* 47.7 0.38 15 4.5 212 -55~150 Symbol RθJA RθJC Rating 62.5 2.62 Unit V V A A A W W/oC mJ V/ns mJ oC Unit oC/W Jun. 2010 Version 1.2 1 MagnaChip Semiconductor Ltd. MDF10N65B N-channel MOSFET 650V Ordering Information Part Number MDF10N65BTH Temp. Range -55~150oC Package TO-220F Packing Tube Electrical Characteristics (Ta =25oC) Characteristics Static Ch...