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MDF11N60 Datasheet

Part Number MDF11N60
Manufacturers MagnaChip
Logo MagnaChip
Description N-Channel MOSFET 600V
Datasheet MDF11N60 DatasheetMDF11N60 Datasheet (PDF)

MDF11N60 N-channel MOSFET 600V MDF11N60 N-Channel MOSFET 600V, 11A, 0.55Ω General Description The MDF11N60 uses advanced MagnaChip’s MOSFET Technology, which provides low on-state resistance, high switching performance and excellent quality. MDF11N60 is suitable device for SMPS, high Speed switching and general purpose applications. Features     VDS = 600V VDS = 660V ID = 11A RDS(ON) ≤ 0.55Ω @ Tjmax @ VGS = 10V @ VGS = 10V Applications    Power Supply PFC High Current, High Speed Switc.

  MDF11N60   MDF11N60






Part Number MDF11N65B
Manufacturers MagnaChip
Logo MagnaChip
Description N-Channel MOSFET
Datasheet MDF11N60 DatasheetMDF11N65B Datasheet (PDF)

MDF11N65B N-channel MOSFET 650V MDF11N65B N-Channel MOSFET 650V, 12A, 0.65Ω General Description These N-channel MOSFET are produced using advanced MagnaChip’s MOSFET Technology, which provides low onstate resistance, high switching performance and excellent quality. These devices are suitable device for SMPS, high Speed switching and general purpose applications. Features VDS = 650V ID = 12A RDS(ON) ≤ 0.65Ω @ VGS = 10V @ VGS = 10V Applications Power Supply PFC High Current, High Speed Switc.

  MDF11N60   MDF11N60







N-Channel MOSFET 600V

MDF11N60 N-channel MOSFET 600V MDF11N60 N-Channel MOSFET 600V, 11A, 0.55Ω General Description The MDF11N60 uses advanced MagnaChip’s MOSFET Technology, which provides low on-state resistance, high switching performance and excellent quality. MDF11N60 is suitable device for SMPS, high Speed switching and general purpose applications. Features     VDS = 600V VDS = 660V ID = 11A RDS(ON) ≤ 0.55Ω @ Tjmax @ VGS = 10V @ VGS = 10V Applications    Power Supply PFC High Current, High Speed Switching G D S Absolute Maximum Ratings (Ta = 25oC) Characteristics Drain-Source Voltage Drain-Source Voltage @ Tjmax Gate-Source Voltage Continuous Drain Current (※) Pulsed Drain Current Power Dissipation Peak Diode Recovery dv/dt(3) Single Pulse Avalanche Energy (4) (1) Symbol VDSS VDSS @ Tjmax VGSS TC=25 C TC=100 C o o Rating 600 660 ±30 11 Unit V V V A A A W W/ oC V/ns mJ o ID IDM 6.9 44 49 TC=25oC Derate above 25 oC PD dv/dt EAS TJ, Tstg 0.39 4.5 720 -55~150 Junction and Storage Temperature Range ※ Id limited by maximum junction temperature C Thermal Characteristics Characteristics Thermal Resistance, Junction-to-Ambient Thermal Resistance, Junction-to-Case (1) (1) Symbol RθJA RθJC Rating 62.5 2.55 Unit o C/W Jun 2011 Version 2.3 1 MagnaChip Semiconductor Ltd. Free Datasheet http://www.datasheetlist.com/ MDF11N60 Ordering Information Part Number MDF11N60TH Temp. Range -55~150 C o Package TO-220F Packing Tube RoHS Status Halogen Free N-channel MOSFET 600V .


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